A SiGe BiCMOS W-Band Single-Chip Frequency Extension Module for VNAs

2020 ◽  
Vol 68 (1) ◽  
pp. 211-221 ◽  
Author(s):  
Esref Turkmen ◽  
Yasar Gurbuz
Keyword(s):  
Single Chip ◽  
W Band ◽  
Sige Bicmos

A Ka-Band Single-Chip SiGe BiCMOS Phased-Array Transmit/Receive Front-End

2016 ◽  
Vol 64 (11) ◽  
pp. 3667-3677 ◽  
Author(s):  
Chao Liu ◽  
Qiang Li ◽  
Yihu Li ◽  
Xiao-Dong Deng ◽  
Hailin Tang ◽  
...  
Keyword(s):  
Phased Array ◽  
Single Chip ◽  
Ka Band ◽  
Front End ◽  
Sige Bicmos

A single-chip 24 GHz SiGe BiCMOS transceiver for FMCW automotive radars

2009 ◽  
Author(s):  
Dave Saunders ◽  
Steve Bingham ◽  
Gaurav Menon ◽  
Don Crockett ◽  
Josh Tor ◽  
...  
Keyword(s):  
Single Chip ◽  
Sige Bicmos ◽  
Automotive Radars ◽  
24 Ghz

scholarly journals W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Design Flow ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Fundamental Oscillation ◽  
Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

2020 ◽  
Author(s):  
Mikko Varonen ◽  
Nima Sheikhipoor ◽  
Bekari Gabritchidze ◽  
Kieran Cleary ◽  
Henrik Forsten ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
W Band ◽  
Sige Bicmos ◽  
Noise Amplifier
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