Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers

2012 ◽  
Vol 60 (6) ◽  
pp. 1850-1861 ◽  
Author(s):  
Myoungbo Kwak ◽  
Donald F. Kimball ◽  
Calogero D. Presti ◽  
Antonino Scuderi ◽  
Carmelo Santagati ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Amplifiers ◽  
High Efficiency ◽  
Base Station ◽  
Rf Power Amplifiers ◽  
Rf Power

On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers

2009 ◽  
Vol 19 (10) ◽  
pp. 665-667 ◽  
Author(s):  
S.C. Cripps ◽  
P.J. Tasker ◽  
A.L. Clarke ◽  
J. Lees ◽  
J. Benedikt
Keyword(s):  
Power Amplifiers ◽  
High Efficiency ◽  
Rf Power Amplifiers ◽  
Rf Power

Pulsed Active Load–Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

2009 ◽  
Vol 57 (4) ◽  
pp. 881-889 ◽  
Author(s):  
Seok Joo Doo ◽  
P. Roblin ◽  
V. Balasubramanian ◽  
R. Taylor ◽  
K. Dandu ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
High Efficiency ◽  
Rf Power Amplifiers ◽  
Rf Power ◽  
Active Load ◽  
Class B ◽  
Gan Hemts ◽  
Load Pull

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

2020 ◽  
Vol 38 (2A) ◽  
pp. 211-225
Author(s):  
Firas M. Ali ◽  
Mahmuod H. Al-Muifraje ◽  
Thamir R. Saeed
Keyword(s):  
Power Amplifiers ◽  
High Efficiency ◽  
Power Device ◽  
Rf Power Amplifiers ◽  
Harmonic Load ◽  
High Electron ◽  
Rf Power ◽  
Large Signal ◽  
Active Device ◽  
Class F

The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

Time-reversal duality of high-efficiency RF power amplifiers

2012 ◽  
Vol 48 (25) ◽  
pp. 1607-1608 ◽  
Author(s):  
T. Reveyrand ◽  
I. Ramos ◽  
Z. Popović
Keyword(s):  
Power Amplifiers ◽  
Time Reversal ◽  
High Efficiency ◽  
Rf Power Amplifiers ◽  
Rf Power
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