Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method

2008 ◽  
Vol 56 (12) ◽  
pp. 2748-2753 ◽  
Author(s):  
Y. Abe ◽  
R. Ishikawa ◽  
K. Honjo
Keyword(s):  
Synthesis Method ◽  
Circuit Synthesis ◽  
Microwave Amplifier ◽  
Lumped Element ◽  
Gan Hemt ◽  
Class F

Class-F Microwave Amplifier Design Using GaAs-HBT and GaN-HEMT

2007 ◽  
Author(s):  
Kazuhiko Honjo ◽  
Ryo Ishikawa ◽  
Tsuyoshi Yoshida ◽  
Cong Zheng
Keyword(s):  
Microwave Amplifier ◽  
Gan Hemt ◽  
Amplifier Design ◽  
Class F

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

scholarly journals Network modelling with Brune's synthesis

2011 ◽  
Vol 9 ◽  
pp. 91-94 ◽  
Author(s):  
F. Mukhtar ◽  
Y. Kuznetsov ◽  
P. Russer
Keyword(s):  
Rational Function ◽  
Numerical Data ◽  
Circuit Synthesis ◽  
Network Modelling ◽  
Function Representation ◽  
Vector Fitting ◽  
Lumped Element ◽  
Fitting Procedure ◽  
Systematic Strategy

Abstract. Network modelling of general, lossy or lossless, one-port and symmetric two-port passive electromagnetic structures in systematic manner is presented. Rational function representation of the numerical data of Z- or Y-parameters is obtained with the use of Vector Fitting procedure. A systematic strategy for obtaining equivalent lumped element circuit from the rational function, applying Brune's circuit synthesis, is also presented.

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