High-Speed Digital-to-Analog Converter Using Schottky Diode Samplers

2006 ◽  
Vol 54 (12) ◽  
pp. 4291-4296 ◽  
Author(s):  
Kae-Oh Sun ◽  
Daniel Warren van der Weide
Keyword(s):  
Schottky Diode ◽  
High Speed ◽  
Digital To Analog Converter ◽  
Analog Converter ◽  
Digital To Analog

Low-power 8-bit 5-GS/s digital-to-analog converter for multi-gigabit wireless transceivers

2012 ◽  
Vol 4 (3) ◽  
pp. 275-282 ◽  
Author(s):  
Behnam Sedighi ◽  
Mahdi Khafaji ◽  
Johann Christoph Scheytt
Keyword(s):  
Low Power ◽  
High Speed ◽  
Wireless Transceivers ◽  
Digital To Analog Converter ◽  
Bicmos Technology ◽  
Analog Converter ◽  
Sige Bicmos ◽  
Digital To Analog ◽  
On Chip ◽  
Binary Weighted

We present a method to realize a low-power and high-speed digital-to-analog converter (DAC) for system-on-chip applications. The new method is a combination of binary-weighted current cells and R-2R ladder and is specially suited for modern BiCMOS technologies. A prototype 5 GS/s DAC is implemented in 0.13 μm SiGe BiCMOS technology. The DAC dissipates 26 mW and provides an SFDR higher than 48 dB for output frequencies up to 1 GHz.

TID Effects on 12-Bit Digital-to-Analog Converter

2013 ◽  
Vol 677 ◽  
pp. 326-333
Author(s):  
Xue Wu ◽  
Wu Lu ◽  
Qi Guo
Keyword(s):  
Elevated Temperature ◽  
High Speed ◽  
Room Temperature ◽  
Irradiation Effects ◽  
Ionizing Irradiation ◽  
Digital To Analog Converter ◽  
Annealing Behavior ◽  
Analog Converter ◽  
Before And After ◽  
Digital To Analog

This Paper describes ionizing irradiation effects and annealing behavior on some commercial available CMOS high speed and high resolution Digital-to-Analog Converter —AD9742. AC and DC parameters are measured before and after radiation and annealing experiment. Results show that DC parameters are more sensitive than AC parameters, and all parameters are fully recovered after room-temperature and elevated-temperature annealing behaviors. Test facilities, results and analysis are presented in this paper in details.

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