Monte Carlo simulation for magnetic dynamic process of deformed micro magnetic clusters

2006 ◽  
Vol 42 (4) ◽  
pp. 927-930 ◽  
Author(s):  
K. Yamaguchi ◽  
S. Tanaka ◽  
O. Nittono ◽  
K. Yamada ◽  
T. Takagi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dynamic Process ◽  
Magnetic Clusters ◽  
Magnetic Dynamic

Monte carlo simulation of magnetization and coercivity of free magnetic clusters

2006 ◽  
Vol 15 (7) ◽  
pp. 1602-1610 ◽  
Author(s):  
Huang Zhi-Gao ◽  
Chen Zhi-Gao ◽  
Jiang Li-Qin ◽  
Ye Qin-Ying ◽  
Wu Qing-Yun
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetic Clusters

Theoretical Study and Monte Carlo Simulation on the Dynamic Process of a Novel Multipacting Cathode for High-Current Diode

2018 ◽  
Vol 46 (6) ◽  
pp. 1929-1936 ◽  
Author(s):  
Ye Dong ◽  
Qingxiang Liu ◽  
Xiangqiang Li ◽  
Haijing Zhou ◽  
Zhiwei Dong
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dynamic Process ◽  
Theoretical Study ◽  
High Current

Magnetization and configurational anisotropy in magnetic clusters: Monte Carlo simulation

2003 ◽  
Vol 37 (2) ◽  
pp. 177-185 ◽  
Author(s):  
Zhigao Huang ◽  
Zhigao Chen ◽  
Fengming Zhang ◽  
Youwei Du
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetic Clusters

Monte Carlo simulation for magnetic dynamic processes of micromagnetic clusters with local disorder

2006 ◽  
Vol 372 (1-2) ◽  
pp. 251-255 ◽  
Author(s):  
Katsuhiko Yamaguchi ◽  
Shinya Tanaka ◽  
Osamu Nittono ◽  
Koji Yamada ◽  
Toshiyuki Takagi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dynamic Processes ◽  
Magnetic Dynamic ◽  
Local Disorder

Magnetic dynamic properties of defective cobalt nanorings: Monte Carlo simulation

2019 ◽  
Vol 473 ◽  
pp. 301-305 ◽  
Author(s):  
Qingying Ye ◽  
Shuiyuan Chen ◽  
Shengkai Huang ◽  
Jinling Wu ◽  
Juyan Xu ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dynamic Properties ◽  
Magnetic Dynamic

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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