High Gain and High Bandwidth Fully Differential Difference Amplifier as Current Sense Amplifier

2021 ◽  
Vol 70 ◽  
pp. 1-11
Author(s):  
Christian D. Matthus ◽  
Simon Buhr ◽  
Martin KreiBig ◽  
Frank Ellinger
Keyword(s):  
High Gain ◽  
Fully Differential ◽  
Sense Amplifier ◽  
Differential Difference Amplifier ◽  
High Bandwidth

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

scholarly journals A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2680
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki
Keyword(s):  
Phase Noise ◽  
Cmos Technology ◽  
High Gain ◽  
Transimpedance Amplifier ◽  
Short Term ◽  
Microelectromechanical System ◽  
Fully Differential ◽  
Mems Oscillator ◽  
Measured Input ◽  
Mode Resonator

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

scholarly journals Compact Ultra-Wideband Series-Feed Microstrip Antenna Arrays for IoT Communications

2021 ◽  
Vol 11 (14) ◽  
pp. 6267
Author(s):  
Tiago Varum ◽  
João Caiado ◽  
João N. Matos
Keyword(s):  
Internet Of Things ◽  
Antenna Arrays ◽  
Millimeter Waves ◽  
Microstrip Antenna ◽  
Communication Systems ◽  
High Gain ◽  
Ultra Wideband ◽  
Huge Number ◽  
Compact Structure ◽  
High Bandwidth

Modern communication systems require high bandwidth to meet the needs of the huge number of sensors and the growing amount of data consumed, and an exponential growth is expected in the future with the integration of internet of things networks. Spectrum regions in the millimeter waves have aroused new interests, mainly because of the contiguous bands available to meet these needs. In return, and to combat the high losses of propagation in these frequencies, higher gain antennas are needed. This paper describes the use of a logarithmic architecture in the design of microstrip antenna arrays, creating structures with high gain and ultra-wide bandwidth. Three different solutions are presented with five, seven, and nine elements, reaching about 25%, 30%, and 44% of bandwidth, achieving ultra-wideband behavior, efficient and with a compact structure operating at frequencies in around 28 GHz.

A New Architecture of LCD Driver of Rail-to-Rail Buffer with High Gain Wide Range

2010 ◽  
Vol 97-101 ◽  
pp. 3765-3768
Author(s):  
Shih Han Lin ◽  
Shu Jung Chen ◽  
Chih Hsiung Shen
Keyword(s):  
High Speed ◽  
High Gain ◽  
Driving Ability ◽  
Fully Differential ◽  
Rail To Rail ◽  
Wide Range ◽  
Lcd Driver ◽  
Additional Circuitry ◽  
Differential Pair ◽  
The Impact

A new modified CMOS buffer amplifier with rail-to-rail input and output range is proposed by TSMC 0.35μm 2P4M process at 3.3V supply. The technique adds dummy pairs to sense the common mode range of the input differential pair and adjusts the output current accordingly. The amplifier provides high gain for a wider range of output voltages. Design considerations for reducing the impact of the additional circuitry on the core are provided. The technique described can be adapted for use with traditional fully-differential rail-to-rail amplifiers, which performs 86.9dB ~92dB dc gain, 15 MHz unit-gain bandwidth, high driving ability with high slew rate under a 100pF capacitance and a 3kΩ series resistance loading. The simulation results indicate that the settling times of rising and falling edge are within 3.5μs. It is effective for a high resolution and high speed LCD driver.

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