scholarly journals Low-Cost High-Sensitive Suns–$V_{\text{oc}}$ Measurement Instrument to Characterize c-Si Solar Cells

2020 ◽  
Vol 69 (9) ◽  
pp. 6429-6435
Author(s):  
Pablo R. Ortega ◽  
Juan M. Pinol ◽  
Isidro Martin ◽  
Albert Orpella ◽  
Gerard Masmitja ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Measurement Instrument ◽  
Si Solar Cells

Hydrogen Passivation of Thin-film Polysilicon Solar Cells

2007 ◽  
Vol 989 ◽  
Author(s):  
Lode Carnel ◽  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Guy Beaucarne ◽  
Jef Poortmans
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Solar Cells ◽  
Low Cost ◽  
Hydrogen Passivation ◽  
Fine Grained ◽  
Si Solar Cells ◽  
Before And After ◽  
Plasma Passivation ◽  
Recombination Velocity

AbstractThin-film polysilicon solar cells are a promising low-cost alternative for bulk silicon solar cells. Due to their reduced material thickness, these solar cells are less dependent on the silicon feedstock price. Until now these devices showed a worse performance compared to bulk Si solar cells due to the small grain size and the high recombination velocity at the grain boundaries. A better understanding of hydrogen passivation is therefore of crucial importance to improve the efficiency of polysilicon solar cells. In this work we characterized fine-grained polysilicon layers with a grain size of only 0.2 μm before and after passivation. Plasma hydrogenation led to a higher hydrogen concentration in the first micron of the layer than nitride passivation. The highest efficiency of 5.0 % was reached when nitride passivation was followed by plasma passivation.

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

Surface Passivation of c-Si by Nanoengineered AlOx toward Low-Cost, High-Efficiency c-Si Solar Cells

2014 ◽  
Author(s):  
H. Lee ◽  
N. Sawamoto ◽  
K. Ueda ◽  
Y. Enomoto ◽  
K. Arafune ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Low Cost ◽  
Si Solar Cells

scholarly journals Low-cost spray-deposited ZrO2 for antireflection in Si solar cells

2019 ◽  
Vol 230 ◽  
pp. 37-43 ◽  
Author(s):  
Woo Jung Shin ◽  
Wen-Hsi Huang ◽  
Meng Tao
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Si Solar Cells

Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range

2021 ◽  
Vol 57 (3) ◽  
pp. 315-322
Author(s):  
A. Simashkevich ◽  
G. Shevchenko ◽  
Yu. Bokshyts ◽  
L. Bruc ◽  
M. Caraman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Uv Spectrum ◽  
Spectrum Range ◽  
Si Solar Cells ◽  
Increased Sensitivity

The Fabrication of Large-Area Upgraded Metallurgical Grade Multi-Crystalline Silicon Solar Cells in a Production Line

2013 ◽  
Vol 743-744 ◽  
pp. 863-869
Author(s):  
Teng Chen ◽  
You Wen Zhao ◽  
Zhi Yuan Don ◽  
Jun Wang ◽  
Tong Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Material Properties ◽  
Production Line ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Open Circuit ◽  
Large Area ◽  
Photovoltaic Properties ◽  
Si Solar Cells

Upgraded metallurgical grade (UMG) silicon has been researched both on the purification methods and its material properties for years, indicating that it is the most promising choice as low-cost feedstock for photovoltaics. In this work, UMG multi-crystalline silicon (mc-Si) prepared by cold crucible refining and electron beam melting was investigated. Solar cells based on such silicon wafers were fabricated in a 156 x 156 mm2 production line and their photovoltaic properties were characterized. Compared with the conventional mc-Si solar cells fabricated in the same commercial production line, the UMG mc-Si solar cells with two busbars presented higher average open circuit voltage (Voc) and average fill factor (FF), which were 628 mV and 78.6 % separately. Although the UMG mc-Si solar cells showed a lower shot-circuit current density (Jsc) of 32.7 A/cm2 in the average and an early reverse breakdown voltage at around 11 V which was due to higher impurities content. The average conversion efficiency of the UMG mc-Si solar cells reached 16.14 %, and the highest conversion efficiency was up to 16.31 %. In addition, the UMG mc-Si solar cells presented relatively low light induced degradation (LID) due to the material properties. Consequently, in consideration of low cost, our UMG mc-Si solar cells substantially met the requirements of commercial manufacturing and had a great potential application for photovoltaic industry.

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