A Broadband, On-Chip Sensor Based on Hall Effect for Current Measurements in Smart Power Circuits

2018 ◽  
Vol 67 (6) ◽  
pp. 1470-1485 ◽  
Author(s):  
Marco Crescentini ◽  
Marco Marchesi ◽  
Aldo Romani ◽  
Marco Tartagni ◽  
Pier Andrea Traverso
Keyword(s):  
Hall Effect ◽  
Smart Power ◽  
Power Circuits ◽  
On Chip

Application of a CMOS current mode approach to on-chip current sensing in smart power circuits

1995 ◽  
Vol 142 (6) ◽  
pp. 357 ◽  
Author(s):  
P. Givelin ◽  
M. Bafleur ◽  
E. Tournier ◽  
T. Lapoulos ◽  
. Siskos
Keyword(s):  
Current Mode ◽  
Smart Power ◽  
Current Sensing ◽  
Power Circuits ◽  
On Chip

scholarly journals Coupling study in smart power mixed ICs with a dedicated on-chip sensor

2015 ◽  
Author(s):  
V. Tomasevic ◽  
A. Boyer ◽  
S. Bendhia ◽  
A. Steinmair ◽  
B. Weiss ◽  
...  
Keyword(s):  
Smart Power ◽  
On Chip

scholarly journals Design of Smart Power-Saving Architecture for Network on Chip

VLSI Design ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Trong-Yen Lee ◽  
Chi-Han Huang
Keyword(s):  
Power Consumption ◽  
Power Saving ◽  
Network On Chip ◽  
Low Power Consumption ◽  
Data Loss ◽  
Smart Power ◽  
Low Area ◽  
Virtual Channels ◽  
On Chip ◽  
Data Transferring

In network-on-chip (NoC), the data transferring by virtual channels can avoid the issue of data loss and deadlock. Many virtual channels on one input or output port in router are included. However, the router includes five I/O ports, and then the power issue is very important in virtual channels. In this paper, a novel architecture, namely, Smart Power-Saving (SPS), for low power consumption and low area in virtual channels of NoC is proposed. The SPS architecture can accord different environmental factors to dynamically save power and optimization area in NoC. Comparison with related works, the new proposed method reduces 37.31%, 45.79%, and 19.26% on power consumption and reduces 49.4%, 25.5% and 14.4% on area, respectively.

On-chip Extraordinary Hall-effect sensors for characterization of nanomagnetic logic devices

2010 ◽  
Vol 54 (9) ◽  
pp. 1027-1032 ◽  
Author(s):  
M. Becherer ◽  
J. Kiermaier ◽  
S. Breitkreutz ◽  
G. Csaba ◽  
X. Ju ◽  
...  
Keyword(s):  
Hall Effect ◽  
Nanomagnetic Logic ◽  
Logic Devices ◽  
Extraordinary Hall Effect ◽  
Hall Effect Sensors ◽  
On Chip

SiC Smart Power JFET Technology for High-Temperature Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1207-1210 ◽  
Author(s):  
Igor Sankin ◽  
V. Bondarenko ◽  
Robin L. Kelley ◽  
Jeff B. Casady
Keyword(s):  
High Temperature ◽  
Logic Gates ◽  
Wide Bandgap ◽  
Switching Frequency ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Switch ◽  
Radiation Resistant ◽  
On Chip ◽  
And Control

Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.

Low-power and high-sensitivity system-on-chip hall effect sensor

2017 ◽  
Author(s):  
Bin Liu ◽  
Yongshun Sun ◽  
Yinjie Ding ◽  
Patrick Cao ◽  
Aaron Liu ◽  
...  
Keyword(s):  
Low Power ◽  
Hall Effect ◽  
High Sensitivity ◽  
System On Chip ◽  
Hall Effect Sensor ◽  
On Chip
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