Contactless Test Access Mechanism for TSV-Based 3-D ICs Utilizing Capacitive Coupling

2016 ◽  
Vol 65 (1) ◽  
pp. 88-95 ◽  
Author(s):  
Iftekhar Ibne Basith ◽  
Rashid Rashidzadeh
Keyword(s):  
Capacitive Coupling ◽  
Test Access Mechanism

Projected Performance of Sub-10 nm GaN-based Double Gate MOSFETs

2017 ◽  
Vol 2 (2) ◽  
pp. 15-19 ◽  
Author(s):  
Md. Saud Al Faisal ◽  
Md. Rokib Hasan ◽  
Marwan Hossain ◽  
Mohammad Saiful Islam
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Channel Length ◽  
Capacitive Coupling ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effects ◽  
Silvaco Atlas

GaN-based double gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs) in sub-10 nm regime have been designed for the next generation logic applications. To rigorously evaluate the device performance, non-equilibrium Green’s function formalism are performed using SILVACO ATLAS. The device is turn on at gate voltage, VGS =1 V while it is going to off at VGS = 0 V. The ON-state and OFF-state drain currents are found as 12 mA/μm and ~10-8 A/μm, respectively at the drain voltage, VDS = 0.75 V. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are ~69 mV/decade and ~43 mV/V, which are very compatible with the CMOS technology. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate. The SS and DIBL are decreased with increasing the underlap length (LUN). Though the source to drain resistance is increased for enhancing the channel length, the underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN-based DG-MOSFETs as one of the excellent promising candidates to substitute currently used MOSFETs for future high speed applications.

scholarly journals Investigation on a Novel Capacitive Electrode for Geophysical Surveys

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Zhiyu Wang ◽  
Shun Wang ◽  
Guangyou Fang ◽  
Qunying Zhang
Keyword(s):  
Electrical Contact ◽  
Capacitive Coupling ◽  
Environmental Damage ◽  
Good Prospect ◽  
Test Results ◽  
Geophysical Surveys ◽  
Detection Circuit ◽  
Operating Bandwidth ◽  
Capacitive Electrode ◽  
Alternative Structure

Nonpolarizable electrodes are applied widely in the electric field measurement for geophysical surveys. However, there are two major problems: (1) systematic errors caused by poor electrical contact in the high resistive terrains and (2) environmental damage associated with using nonpolarizable electrodes. A new alternative structure of capacitive electrode, which is capable of sensing surface potential through weak capacitive coupling, is presented to solve the above problems. A technique is introduced to neutralize distributed capacitance and input capacitance of the detection circuit. With the capacitance neutralization technique, the transmission coefficient of capacitive electrode remains stable when environmental conditions change. The simulation and field test results indicate that the new capacitive electrode has an operating bandwidth range from 0.1 Hz to 1 kHz. The capacitive electrodes have a good prospect of the applications in geophysical prospecting, especially in resistive terrains.

Modeling Output Signals of Solid-State Photomultiplier with Capacitive Coupling

2020 ◽  
Author(s):  
Zdenek Kolka ◽  
Viera Biolkova ◽  
Otakar Wilfert ◽  
Dalibor Biolek ◽  
Michal Kubicek ◽  
...  
Keyword(s):  
Solid State ◽  
Capacitive Coupling

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

scholarly journals Sideband-resolved resonator electromechanics based on a nonlinear Josephson inductance probed on the single-photon level

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Philip Schmidt ◽  
Mohammad T. Amawi ◽  
Stefan Pogorzalek ◽  
Frank Deppe ◽  
Achim Marx ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Electromechanical Coupling ◽  
Single Photon ◽  
Capacitive Coupling ◽  
Inductive Coupling ◽  
Coupling Scheme ◽  
Strong Coupling Regime ◽  
Coupling Rate ◽  
Light Matter Interaction ◽  
Microwave Regime

AbstractLight-matter interaction in optomechanical systems is the foundation for ultra-sensitive detection schemes as well as the generation of phononic and photonic quantum states. Electromechanical systems realize this optomechanical interaction in the microwave regime. In this context, capacitive coupling arrangements demonstrated interaction rates of up to 280 Hz. Complementary, early proposals and experiments suggest that inductive coupling schemes are tunable and have the potential to reach the single-photon strong-coupling regime. Here, we follow the latter approach by integrating a partly suspended superconducting quantum interference device (SQUID) into a microwave resonator. The mechanical displacement translates into a time varying flux in the SQUID loop, thereby providing an inductive electromechanical coupling. We demonstrate a sideband-resolved electromechanical system with a tunable vacuum coupling rate of up to 1.62 kHz, realizing sub-aN Hz−1/2 force sensitivities. The presented inductive coupling scheme shows the high potential of SQUID-based electromechanics for targeting the full wealth of the intrinsically nonlinear optomechanics Hamiltonian.

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