Johnson–Nyquist Noise of the Quantized Hall Resistance

2011 ◽  
Vol 60 (7) ◽  
pp. 2280-2285 ◽  
Author(s):  
Jürgen Schurr ◽  
Harald Moser ◽  
Klaus Pierz ◽  
Günther Ramm ◽  
Bryan P. Kibble
Keyword(s):  
Hall Resistance ◽  
Nyquist Noise

Johnson-Nyquist noise of the quantized Hall resistance

CPEM 2010 ◽  
2010 ◽  
Author(s):  
J. Schurr ◽  
K. Pierz ◽  
B. P. Kibble
Keyword(s):  
Hall Resistance ◽  
Nyquist Noise

Are anomalous values of the quantized Hall resistance really anomalous?

Metrologia ◽  
1996 ◽  
Vol 33 (5) ◽  
pp. 499-502 ◽  
Author(s):  
B Jeckelmann ◽  
A D Inglis ◽  
B Jeanneret
Keyword(s):  
Hall Resistance

Anomalous quantum-Hall resistance in bilayer counterflow transport

2007 ◽  
Vol 4 (2) ◽  
pp. 485-488
Author(s):  
Z. F. Ezawa ◽  
S. Suzuki ◽  
G. Tsitsishvili
Keyword(s):  
Quantum Hall ◽  
Hall Resistance

A reevaluation of the NML absolute ohm and quantized Hall resistance determinations

1989 ◽  
Vol 38 (2) ◽  
pp. 245-248 ◽  
Author(s):  
G.W. Small ◽  
B.W. Ricketts ◽  
P.C. Coogan
Keyword(s):  
Hall Resistance

Modulation of the hall resistance in CrxMn1−xAs compounds

1980 ◽  
Vol 21 (3) ◽  
pp. 221-227 ◽  
Author(s):  
H.J. Krokoszinski ◽  
K. Bärner
Keyword(s):  
Hall Resistance

Preliminary results on GaAs-algaas heterostructure quantum Hall resistance standard by the NIM

CPEM 2010 ◽  
2010 ◽  
Author(s):  
Y. Zhong ◽  
Q. Zhong ◽  
Q. He ◽  
Y. F. Lu ◽  
J. T. Zhao ◽  
...  
Keyword(s):  
Quantum Hall ◽  
Hall Resistance ◽  
Preliminary Results ◽  
Resistance Standard

INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1445-1449
Author(s):  
K. TAKEHANA ◽  
Y. IMANAKA ◽  
T. TAKAMASU ◽  
M. HENINI
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Electron System ◽  
Hall Resistance ◽  
Field Range ◽  
Voltage Range ◽  
Quantum Hall Regime ◽  
Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

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