Characterization and Modeling of Thick-Film Components for Hybrid Microwave-Integrated Circuits

1985 ◽  
Vol IM-34 (4) ◽  
pp. 564-569 ◽  
Author(s):  
Munawar Ahmad ◽  
Sedki M. Riad ◽  
Aicha A. R. Riad ◽  
William A. Davis
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Microwave Integrated Circuits

scholarly journals New Thick-Film Microwave Elements for Microwave Integrated Circuits

1983 ◽  
Vol 11 (1) ◽  
pp. 1-20 ◽  
Author(s):  
Janusz J. Gondek ◽  
Marek A. Wójcicki ◽  
Jan Cąber
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Mathematical Models ◽  
Thick Film ◽  
Technological Process ◽  
Operating Conditions ◽  
Microwave Integrated Circuits ◽  
Thin Film Technology ◽  
Strip Lines ◽  
Constituent Elements

The realisation of microwave integrated circuits consisting of numerous elements and components, both passive and active, takes place in steps. Initially, experimental constituent elements are designed and constructed, and only after it is found that they satisfy the operating conditions, can they be integrated into a sub-system. As a result of this we obtain complicated Microwave Integrated Circuits (MICs). Initially however one has to construct basic MIC elements such as: resonators, filters, couplings, Y branch joints, circulators, etc. During research over several years carried out at the Microelectronics Department, Institute of Electronics, of the Mining and Metallurgical University of Kraków and devoted to the application of thick-film technology to MIC, the authors have devised and constructed several microwave elements using strip-lines and this paper reports of the results of their studies.Pastes produced by DU PONT/USA were used. New mathematical models for designing thick-film microwave elements have been elaborated using computer techniques. These programmes have differed from analogous ones for MIC realized by thin-film technology can be adapted, after certain modifications, to the realisation of MIC. The authors have introduced new technological operations, not used so far, to the technological process. This has made possible the production of thick-film microwave elements with parameters comparable to those obtained in thin-film technology.

scholarly journals The Application of New Du Pont/USA/Copper Composition for Manufacturing of Thick-Film Microwave Low Loss Resonators on L and X Band

1981 ◽  
Vol 9 (2) ◽  
pp. 157-163 ◽  
Author(s):  
Janusz J. Gondek ◽  
Marek A. Wojcicki ◽  
Jan Koprowski
Keyword(s):  
Statistical Analysis ◽  
Integrated Circuits ◽  
Mathematical Models ◽  
Thick Film ◽  
Future Development ◽  
Microwave Filters ◽  
Low Loss ◽  
Microwave Integrated Circuits ◽  
X Band ◽  
Measurement Results

The applicability of the various copper compositions to the production of thick-film microwave devices has been examined. The results of this work are presented in this paper. The paper presents criteria and computer programs for thick-film microwave integrated circuits. The investigations of asymmetrical striplines, stripline and circular resonators, microwave filters etc., have been used as a basis. The circuits were examined within the frequency band of 1–12 GHz. Based on the measurement results and the statistical analysis of the parameters of microwave integrated circuits, interesting conclusions concerned with the applications of thick-film techniques to microwaves have been drawn. The results obtained have been compared with other work and new mathematical models have been prepared. Finally the future development of microwave integrated circuits has been commented on.

scholarly journals Miniature Thick Film Resistors for Microwave Integrated Circuits

1991 ◽  
Vol 14 (3) ◽  
pp. 119-127
Author(s):  
Zbigniew Szczepański
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Electrical Parameters ◽  
Microwave Integrated Circuits ◽  
Directional Couplers ◽  
Microstrip Lines ◽  
Lumped Resistors

In this paper the results of miniature thick film resistors designed as add-on lumped resistors are presented. A few resistor configurations have been elaborated and tested, and a specific trimming resistance, which avoids parasitic trimming inductance was used. Some of the designed resistors were used in isolators and directional couplers for the 2-11 GHz band. The electrical parameters have been presented and discussed. The assembly methods for these resistors to the microstrip lines have also been given.

scholarly journals Advances in Thick Film Conductors for Microwave Integrated Circuits

1980 ◽  
Vol 6 (3-4) ◽  
pp. 215-218 ◽  
Author(s):  
R. Wayne Johnson ◽  
Phil W. Rich ◽  
Debbie D. Rich ◽  
Larry K. Wilson
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Microwave Properties ◽  
Excellent Performance ◽  
Microwave Integrated Circuits ◽  
Microwave Characteristics

New conductor pastes have made possible great improvements in the loss characteristics of thick film microwave integrated circuits. This paper presents data on the microwave characteristics of transmission structures made from newly developed copper, silver and gold conductor pastes on alumina and garnet substrates. The resistivity and microstructure for each conductor material was examined for correlation with microwave properties. These data show that thick film circuits can give excellent performance through 18 GHz.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

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