Detection of Internal Stuck-open Faults in Scan Chains

Diagnose Compound Hold Time Faults Caused by Spot Delay Defects at Clock Tree

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0103 ◽

2011 ◽

Author(s):

Yu Huang ◽

Wu-Tung Cheng ◽

Ting-Pu Tai ◽

Liyang Lai ◽

Ruifeng Guo ◽

...

Keyword(s):

Hold Time ◽

Clock Signal ◽

Clock Tree ◽

Scan Testing ◽

Design Error ◽

Functional Logic ◽

Scan Chains ◽

Delay Defects

Abstract If a signal on clock tree is slower than expected due to either a design error or a manufacturing defect, it may cause complicated fault behaviors during scan-based testing. It makes the diagnosis of such defect especially difficult if the defective clock signal is used for both shift and capture operations during the scan testing, because (1) the defect induces hold time faults on scan chains during shift cycles, and (2) hold-time faults may also be introduced during capture cycles in the functional logic paths. In this paper we illustrate the failure behaviors of such clock defects and propose an algorithm to diagnose it.

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Fault Isolation of Open Defects Using Space Domain Reflectometry

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0011 ◽

2012 ◽

Author(s):

Mayue Xie ◽

Zhiguo Qian ◽

Mario Pacheco ◽

Zhiyong Wang ◽

Rajen Dias ◽

...

Keyword(s):

Integrated Circuits ◽

Fault Isolation ◽

Nondestructive Technique ◽

Space Domain ◽

New Approach ◽

Defect Localization ◽

Open Faults ◽

Open Defects ◽

Application Optimization ◽

Rf Magnetic Field

Abstract Recently, a new approach for isolation of open faults in integrated circuits (ICs) was developed. It is based on mapping the radio-frequency (RF) magnetic field produced by the defective part fed with RF probing current, giving the name to Space Domain Reflectometry (SDR). SDR is a non-contact and nondestructive technique to localize open defects in package substrates, interconnections and semiconductor devices. It provides 2D failure isolation capability with defect localization resolution down to 50 microns. It is also capable of scanning long traces in Si. This paper describes the principles of the SDR and its application for the localization of open and high resistance defects. It then discusses some analysis methods for application optimization, and gives examples of test samples as well as case studies from actual failures.

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