Characterization of PZT and PNZT thin films for monolithic microwave integrated circuit applications

2011 ◽  
Author(s):  
Suhana Sulaiman ◽  
Hanisah Mohamed Nadzar ◽  
Zaiki Awang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Microwave Integrated Circuit ◽  
Monolithic Microwave Integrated Circuit

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

2010 ◽  
Vol 2 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Jutta Kühn ◽  
Markus Musser ◽  
Friedbert van Raay ◽  
Rudolf Kiefer ◽  
Matthias Seelmann-Eggebert ◽  
...  
Keyword(s):  
High Power ◽  
Integrated Circuit ◽  
Gate Length ◽  
Microwave Integrated Circuit ◽  
Frequency Range ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Rf Devices ◽  
Line Technology

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)

2020 ◽  
Vol 96 (3s) ◽  
pp. 321-324
Author(s):  
Е.В. Ерофеев ◽  
Д.А. Шишкин ◽  
В.В. Курикалов ◽  
А.В. Когай ◽  
И.В. Федин
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
Phase Shifter ◽  
Phase Error ◽  
Microwave Integrated Circuit ◽  
Gain Compression ◽  
Monolithic Microwave Integrated Circuit ◽  
And Performance ◽  
Power Capability

В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

Laser-direct-written capacitors and inductors for GaAs monolithic microwave integrated circuit trimming

1988 ◽  
Vol 24 (22) ◽  
pp. 1396 ◽  
Author(s):  
C.L. Chen ◽  
J.G. Black ◽  
S.P. Doran ◽  
L.J. Mahoney ◽  
R.A. Murphy ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Microwave Integrated Circuit ◽  
Monolithic Microwave Integrated Circuit
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