Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

2017 ◽  
Vol 59 (3) ◽  
pp. 902-909 ◽  
Author(s):  
Liang Zhou ◽  
Zheng Wei San ◽  
Yu-Jie Hua ◽  
Liang Lin ◽  
Shuo Zhang ◽  
...  
Keyword(s):  
High Power ◽  
Failure Mechanisms ◽  
High Power Microwave ◽  
Gan Hemt ◽  
Power Microwave

scholarly journals Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

2020 ◽  
Vol 5 (2) ◽  
pp. 192-198 ◽  
Author(s):  
P. Murugapandiyan ◽  
A. Mohanbabu ◽  
V. Rajya Lakshmi ◽  
V.N. Ramakrishnan ◽  
Arathy Varghese ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Buffer Layer ◽  
High Power ◽  
High Power Microwave ◽  
Gan Hemt ◽  
Microwave Applications ◽  
Aln Buffer ◽  
Power Microwave

scholarly journals Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 106
Author(s):  
Yingshuo Qin ◽  
Changchun Chai ◽  
Fuxing Li ◽  
Qishuai Liang ◽  
Han Wu ◽  
...  
Keyword(s):  
High Power ◽  
Simulation Models ◽  
Future Research ◽  
High Electron ◽  
Heat Accumulation ◽  
High Power Microwave ◽  
Self Heating ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Power Microwave

The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.

GaN Materials for High Power Microwave Amplifiers

1998 ◽  
Vol 512 ◽  
Author(s):  
Lester F. Eastman ◽  
Kenneth chu ◽  
Joseph smart ◽  
J. Richard Shealy
Keyword(s):  
Electron Scattering ◽  
High Power ◽  
Power Amplifiers ◽  
Piezoelectric Effect ◽  
Device Fabrication ◽  
Maximum Frequency ◽  
High Power Microwave ◽  
Power Added Efficiency ◽  
Gan Hemt ◽  
Power Microwave

ABSTRACTThe key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for .15 μm gates reached 140 GHz, while .3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

2017 ◽  
Vol 111 ◽  
pp. 1050-1057 ◽  
Author(s):  
P. Murugapandiyan ◽  
S. Ravimaran ◽  
J. William ◽  
K. Meenakshi Sundaram
Keyword(s):  
High Power ◽  
High Power Microwave ◽  
Gan Hemt ◽  
Microwave Applications ◽  
Power Microwave

High Power Microwave Generation by Double-Anode Virtual Cathode Oscillator

2019 ◽  
Vol 139 (10) ◽  
pp. 421-427
Author(s):  
Kazuki Nagao ◽  
Wataru Takatsu ◽  
Pham Van Thuan ◽  
Taichi Sugai ◽  
Weihua Jiang
Keyword(s):  
High Power ◽  
Virtual Cathode ◽  
High Power Microwave ◽  
Microwave Generation ◽  
Power Microwave
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