A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor With NH3 Sensing Application

2020 ◽  
Vol 67 (10) ◽  
pp. 4385-4391
Author(s):  
Nitesh K. Chourasia ◽  
Abhishek Kumar Singh ◽  
Suyash Rai ◽  
Anand Sharma ◽  
P. Chakrabarti ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Operating Voltage ◽  
Graphene Field Effect Transistor ◽  
Large Channel ◽  
Effect Transistor ◽  
Sensing Application

Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

2016 ◽  
Vol 14 (5) ◽  
pp. 052301-52305 ◽  
Author(s):  
Jingbo Liu Jingbo Liu ◽  
Pingjian Li Pingjian Li ◽  
Yuanfu Chen Yuanfu Chen ◽  
Xinbo Song Xinbo Song ◽  
Fei Qi Fei Qi ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Voltage ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Low Insertion Loss

scholarly journals Channel length scaling and electrical characterization of graphene field effect transistor (GFET)

2019 ◽  
Vol 15 (2) ◽  
pp. 697
Author(s):  
Reena Sri Selvarajan ◽  
Azrul Azlan Hamzah ◽  
Norliana Yusof ◽  
Burhanuddin Yeop Majlis
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Characterization ◽  
Channel Length ◽  
Short Channel ◽  
Conducting Channel ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Length Scaling

<p>The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.</p>

scholarly journals Graphene field effect transistor as a radiation and photodetector

2012 ◽  
Author(s):  
Ozhan Koybasi ◽  
Isaac Childres ◽  
Igor Jovanovic ◽  
Yong P. Chen
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document