Switching Performance Comparison With Low Switching Energy Due to Initial Temperature Increment in CoFeB/MgO-Based Single and Double Barriers

2019 ◽  
Vol 66 (9) ◽  
pp. 4062-4067
Author(s):  
B. Teso ◽  
A. Siritaratiwat ◽  
A. Kaewrawang ◽  
A. Kruesubthaworn ◽  
A. Namvong ◽  
...  
Keyword(s):  
Initial Temperature ◽  
Performance Comparison ◽  
Switching Performance ◽  
Temperature Increment ◽  
Switching Energy

Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies

2020 ◽  
Vol 1004 ◽  
pp. 783-788
Author(s):  
Ki Jeong Han ◽  
Ajit Kanale ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
Energy Loss ◽  
High Frequency ◽  
Figure Of Merit ◽  
Short Circuit ◽  
Electrical Characteristics ◽  
Circuit Performance ◽  
Switching Performance ◽  
Switching Energy ◽  
Cell Topology ◽  
Linear Cell

The electrical characteristics of the 1.2-kV rated 4H-SiC accumulation-channel split-gate octagonal cell MOSFET (SG-OCTFET) are experimentally compared with linear, square, hexagonal, octagonal, and compact-octagonal cell topologies. The specific on-resistance of the SG-OCTFET is 52% larger than the conventional linear cell topology. However, the SG-OCTFET has: (i) high-frequency figure-of-merit HFFOM[Ron×Cgd] 9.4×, 6.1×, 2.6×, 2.0×, and 1.8× superior to the square, hex, linear, octagonal, and compact-octagonal cells; (ii) fastest switching performance among all cell topologies, with 26% smaller switching energy loss than the conventional linear cell topology; and (iii) short circuit capability 1.5× longer than the conventional linear cell topology. The SG-OCTFET device is therefore an optimum candidate for high frequency applications of SiC MOSFETs.

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs

2013 ◽  
Vol 740-742 ◽  
pp. 950-953
Author(s):  
Tomohiro Tamaki ◽  
Shinya Ishida ◽  
Yoshikazu Tomizawa ◽  
Hiroyuki Nakamura ◽  
Yasuhiro Shirai ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Maximum Load ◽  
Performance Comparison ◽  
Junction Temperature ◽  
Switching Performance ◽  
Operating Current ◽  
Effect Transistor

We compare the on-state and switching performance of a 600 V-class Hybrid SiC junction field effect transistor (HJT) and Si superjunction MOSFETs (SJ-MOSs), both of which are packaged in TO-3P full-mold package, as a function of operating frequency. The maximum load current is limited by the package power dissipation rating determined by the maximum junction temperature. Since the HJT is composed of a SiC JFET and a low voltage Si MOSFET, the allowable maximum junction temperature of the HJT is the same as that of SJ-MOSFETs, namely 150 °C. The experimental results show that the maximum operating current of the HJT is comparable to that of SJ-MOSs, but the EMI noise of the HJT is much suppressed due to lower dV/dt.

scholarly journals Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration

2014 ◽  
Vol 29 (5) ◽  
pp. 2428-2440 ◽  
Author(s):  
Alberto Rodriguez Alonso ◽  
Marcos Fernandez Diaz ◽  
Diego. G. Lamar ◽  
Manuel Arias Perez de Azpeitia ◽  
Marta M. Hernando ◽  
...  
Keyword(s):  
Performance Comparison ◽  
Switching Performance

scholarly journals Switching performance comparison of the SiC JFET and the SiC JFET/Si MOSFET cascode configuration

2013 ◽  
Author(s):  
Alberto Rodriguez ◽  
Marcos Fernandez ◽  
Marta M. Hernando ◽  
Diego. G. Lamar ◽  
Manuel Arias ◽  
...  
Keyword(s):  
Performance Comparison ◽  
Switching Performance

scholarly journals Ultra-high rate of temperature increment from superparamagnetic nanoparticles for highly efficient hyperthermia

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jae-Hyeok Lee ◽  
Bosung Kim ◽  
Yongsub Kim ◽  
Sang-Koog Kim
Keyword(s):  
Heat Dissipation ◽  
Initial Temperature ◽  
Magnetic Hyperthermia ◽  
Superparamagnetic Nanoparticles ◽  
High Rate ◽  
Spin Excitation ◽  
Highly Efficient ◽  
Temperature Increment ◽  
Spin Resonance ◽  
Increment Rate

AbstractThe magneto-thermal effect, which represents the conversion of magnetostatic energy to heat from magnetic materials, has been spotlighted for potential therapeutic usage in hyperthermia treatments. However, the realization of its potential has been challenged owing to the limited heating from the magnetic nanoparticles. Here, we explored a new-concept of magneto-thermal modality marked by low-power-driven, fast resonant spin-excitation followed by consequent energy dissipation, which concept has yet to be realized for current hyperthermia applications. We investigated the effect of spin resonance-mediated heat dissipation using superparamagnetic Fe3O4 nanoparticles and achieved an extraordinary initial temperature increment rate of more than 150 K/s, which is a significant increase in comparison to that for the conventional magnetic heat induction of nanoparticles. This work would offer highly efficient heat generation and precision wireless controllability for realization of magnetic-hyperthermia-based medical treatment.

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