Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

2019 ◽  
Vol 66 (8) ◽  
pp. 3535-3540 ◽  
Author(s):  
Lin Xu ◽  
Chenguang Qiu ◽  
Chenyi Zhao ◽  
Zhiyong Zhang ◽  
Lian-Mao Peng
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Carrier Transport ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Insight Into

Heme-Enabled Electrical Detection of Carbon Monoxide at Room Temperature Using Networked Carbon Nanotube Field-Effect Transistors

2007 ◽  
Vol 19 (25) ◽  
pp. 6059-6061 ◽  
Author(s):  
Xiaochen Dong ◽  
Dongliang Fu ◽  
Moawia O. Ahmed ◽  
Yumeng Shi ◽  
S. G. Mhaisalkar ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Electrical Detection

Self-consistent simulation of multi-walled CNT nanotransistors

2010 ◽  
Vol 2 (5) ◽  
pp. 453-456 ◽  
Author(s):  
Davide Mencarelli ◽  
Luca Pierantoni ◽  
Andrea D. Donato ◽  
Tullio Rozzi
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
The Self ◽  
Simulation Tool ◽  
Numerical Convergence ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.

scholarly journals Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

2006 ◽  
Vol 89 (24) ◽  
pp. 243502 ◽  
Author(s):  
H. B. Peng ◽  
M. E. Hughes ◽  
J. A. Golovchenko
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Single Charge

Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators

2008 ◽  
Vol 47 (4) ◽  
pp. 2056-2059 ◽  
Author(s):  
Yasuhide Ohno ◽  
Yoshihiro Asai ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
Kazuhiko Matsumoto
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors

Hopping Transport and Voltage Induced Metal-Insulator Transition in Polythiophene Field Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Anoop Singh Dhoot ◽  
Guangming Wang ◽  
Daniel Moses ◽  
Alan J. Heeger
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Carrier Transport ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Zero Temperature ◽  
Coulomb Interactions ◽  
Metal Insulator ◽  
Left Behind ◽  
Probe Measurements

ABSTRACTWe have studied the carrier transport in regio-regular polythiophene field effect transistors (FETs) by four-probe measurements of the steady-state channel conductance from room temperature to 4.2 K. At high gate voltage (constant total carrier density, n = 5×1012 cm−2) and at low temperatures, we demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition. In the insulating regime, the carrier transport is well described by phonon assisted hopping in a disordered Fermi Glass (with Coulomb interactions between the hopping charge carrier and the charge left behind). At the highest gate voltages and at sufficiently high source-drain voltages, the data imply a zero-temperature transition from disordered insulator to metal.

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