OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET

2018 ◽  
Vol 65 (9) ◽  
pp. 3654-3661
Author(s):  
Vishal A. Tiwari ◽  
Rama Divakaruni ◽  
Terence B. Hook ◽  
Deleep R. Nair
Keyword(s):  
Silicon Germanium ◽  
And Performance ◽  
Performance Variations

scholarly journals Electrophysiological and performance variations following driving events involving an increase in mental workload

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Hugo Loeches De La Fuente ◽  
Catherine Berthelon ◽  
Alexandra Fort ◽  
Virginie Etienne ◽  
Marleen De Weser ◽  
...  
Keyword(s):  
Mental Workload ◽  
And Performance ◽  
Performance Variations

Performance Variations Among Strategic Group Members: An Examination of Individual Firm Capability

1989 ◽  
Vol 15 (4) ◽  
pp. 649-661 ◽  
Author(s):  
Michael W. Lawless ◽  
Donald D. Bergh ◽  
William D. Wilsted
Keyword(s):  
Explanatory Power ◽  
Group Analysis ◽  
Performance Model ◽  
Strategic Groups ◽  
Strategic Group ◽  
Common Strategy ◽  
Firm Capability ◽  
Group Members ◽  
And Performance ◽  
Performance Variations

Because of inconsistent empirical evidence, the membership-performance model pervasive in strategic group analysis is re-examined. We propose that individualfirm capabilities, which reflect capacity to implement or change strategy, moderate the effect of members' shared strategy characteristics on performance. Controlling for market structure, we defined two strategic groups based on common strategy characteristics among 55 manufacturing firms. We found significant differences in performance and capabilities within each group. There was also evidence of a significant correlation between capabilities and performance within each group. We conclude that effects offirms' capabilities should be accountedfor to increase the explanatory power of strategic groups in competitive performance.

Novel Extended-Pi Shaped Silicon-Germanium (eΠ-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs

2007 ◽  
Author(s):  
Kian-Ming Tan ◽  
Tsung-Yang Liow ◽  
Rinus T. P. Lee ◽  
Ming Zhu ◽  
Keat Mun Hoe ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Performance Enhancement ◽  
And Performance

In situ studies of metal–semiconductor interactions with synchrotron radiation

1998 ◽  
Vol 5 (3) ◽  
pp. 1050-1051
Author(s):  
D. E. Sayers ◽  
P. T. Goeller ◽  
B. I. Boyanov ◽  
R. J. Nemanich
Keyword(s):  
Synchrotron Radiation ◽  
Silicon Germanium ◽  
Signal To Noise Ratio ◽  
Thick Films ◽  
Strained Silicon ◽  
Reaction Products ◽  
Signal To Noise ◽  
In Situ Studies ◽  
And Performance

The capabilities and performance of a UHV system for in situ studies of metal–semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10−10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon–germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

Temperature and performance variations along single chamber solid oxide fuel cells

2009 ◽  
Vol 186 (1) ◽  
pp. 89-95 ◽  
Author(s):  
Bertrand Morel ◽  
Réal Roberge ◽  
Sylvio Savoie ◽  
Teko W. Napporn ◽  
Michel Meunier
Keyword(s):  
Fuel Cells ◽  
Solid Oxide Fuel Cells ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Single Chamber ◽  
And Performance ◽  
Performance Variations

285°C Resistor Drift and Failure Analysis

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000259-000266
Author(s):  
Mark Hahn ◽  
Ron Smith ◽  
Milton Watts
Keyword(s):  
Thin Film ◽  
High Impact ◽  
Life Testing ◽  
Circuit Performance ◽  
Root Cause ◽  
And Performance ◽  
The Many ◽  
Performance Variations ◽  
Device Test ◽  
Scanning Electron

In order to improve the reliability of down-hole electronics Quartzdyne Electronics has invested over 10 million device test hours in life testing of our circuits in both powered and un-powered modes. In addition to time at temperature, these tests include thermal cycling and high impact drop testing. While resistors tend to be generally reliable, we have observed resistance drift in some units that has pushed circuit performance outside of accepted electrical specifications. In an attempt to comprehend the root cause(s) of resistance drift, failed samples have been studied in a scanning electron microscope. The resulting observations have led to structured designs of experiment to isolate the many possible root causes. This paper will present these observations, experimental outcomes and draw conclusions surrounding thick film vs. thin film performance, variations between value ranges, differences between vendors, and a possible link relating the drift mechanism to the method and extent of value trimming. This information should be useful to resistor vendors interested in improving the quality and performance of their products.

Switching and performance variations of on-orbit BDS satellite clocks

2019 ◽  
Vol 63 (5) ◽  
pp. 1681-1696 ◽  
Author(s):  
Guanwen Huang ◽  
Bobin Cui ◽  
Qin Zhang ◽  
Pingli Li ◽  
Wei Xie
Keyword(s):  
And Performance ◽  
Performance Variations

Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors

2007 ◽  
Vol 995 ◽  
Author(s):  
Grace Huiqi Wang ◽  
Eng-Huat Toh ◽  
Keat-Mun Hoe ◽  
S. Tripathy ◽  
Guo-Qiang Lo ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Silicon Germanium ◽  
Tensile Strain ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Thin Body ◽  
Uniaxial Tensile ◽  
Silicon Source ◽  
D Region ◽  
And Performance

AbstractSilicon (Si) source and drain (S/D) regions have been successfully integrated in thin-body silicon-germanium-on-insulator (SGOI) n-FETs. The selectively grown Si S/D induces uniaxial tensile strain in the SiGe channel. Devices with gate length LG down to 50 nm were fabricated. The Si S/D gives rise to 40% higher saturation drive current IDsat for transistors fabricated on Si0.60Ge0.40-on-insulator substrates. For n-FETs fabricated on Si0.75Ge0.25-on-insulator substrates, a 27% IDsat enhancement was observed. Lattice mismatch between the silicon S/D region and the SiGe channel was exploited to induce lateral tensile strain and vertical compressive strain in the channel, leading to enhancement in electron mobility. Analyses of contributions from the tensile strain to mobility enhancement and performance improvement are discussed

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