Doping Profile Optimization for Power Devices Using Topology Optimization

2018 ◽  
Vol 65 (9) ◽  
pp. 3869-3877
Author(s):  
Katsuya Nomura ◽  
Tsuguo Kondoh ◽  
Tsuyoshi Ishikawa ◽  
Shintaro Yamasaki ◽  
Kentaro Yaji ◽  
...  
Keyword(s):  
Topology Optimization ◽  
Doping Profile ◽  
Power Devices ◽  
Profile Optimization

Doping profile optimization in silicon permeable base transistors for high-frequency, high-voltage operation

2003 ◽  
Author(s):  
D.D. Rathman ◽  
M.A. Hollis ◽  
R.A. Murphy ◽  
A.L. McWhorter ◽  
M.J. McNamara
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Doping Profile ◽  
Profile Optimization

Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC

MRS Advances ◽  
2019 ◽  
Vol 4 (44-45) ◽  
pp. 2377-2382
Author(s):  
J Pan ◽  
S. Afroz ◽  
N. Crain ◽  
W. Henning ◽  
J. Oliver ◽  
...  
Keyword(s):  
Power Electronics ◽  
Schottky Diode ◽  
High Voltage ◽  
Deep Level ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Doping Profile ◽  
Power Devices ◽  
Oxide Interface ◽  
Interfacial Defects

AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide interface trap densities (High Voltage HF MOS CV), measured the device channel doping profile for both 4H SiC and silicon, gate metal workfunction, and simulated the effects on DC/AC performance.

An Immunological Algorithm for Doping Profile Optimization in Semiconductors Design

2010 ◽  
pp. 213-222 ◽  
Author(s):  
Giovanni Stracquadanio ◽  
Concetta Drago ◽  
Vittorio Romano ◽  
Giuseppe Nicosia
Keyword(s):  
Doping Profile ◽  
Profile Optimization
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