The Effect of the Original Thickness of Ag in the Graphene–Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs

2018 ◽  
Vol 65 (9) ◽  
pp. 3803-3808 ◽  
Author(s):  
Wei Chen ◽  
Yugang Zhou ◽  
Xianzheng Yu ◽  
Zili Xie ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Conductive Layer ◽  
Electrical And Optical Properties ◽  
Uv Leds ◽  
Transparent Conductive Layer

Electrical and Optical Properties of n-type and p-type ZnO

2004 ◽  
Vol 829 ◽  
Author(s):  
D. C. Look ◽  
B. Claflin
Keyword(s):  
Optical Properties ◽  
Uv Light ◽  
Detailed Knowledge ◽  
Free Electrons ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Light Emitting ◽  
P Type ◽  
Uv Leds ◽  
Dominant Acceptor

ABSTRACTIn recent years, ZnO has been proposed for new electronic and optoelectronic devices, such as transparent transistors and UV light-emitting diodes (LEDs). The LED application will require both n-type and p-type ZnO, but the latter is difficult to produce, and progress in this area will require a detailed knowledge of the various impurities and defects that affect the electrical and optical properties. The dominant donors in as-grown ZnO are usually thought to be interstitial H and substitutional AlZn, with activation energies of about 40 and 65 meV, respectively. However, interstitial Zn and its associated complexes may also contribute free electrons. The dominant acceptor, at least in vapor-phase-grown material, is the Zn vacancy; however, substitutional NO is also present, although sometimes passivated by H. To produce p-type ZnO, it is necessary to dope with acceptor-type impurities, and some success has been achieved with N, P, As, and Sb. However, only N has been proven to have simple substitutional character (NO), and more complicated acceptor structures, such as AsZn-2VZn, have been proposed for some of the other group V elements. Both homostructural and heterostructural UV LEDs have been fabricated, although not of high luminescent power so far. The main objective of this paper is to review the Hall-effect and photoluminescence results on n-type and p-type ZnO.

Fabrication of UV LEDs with Metal-doped ITO Transparent Conductive Layer

2018 ◽  
Vol 39 (12) ◽  
pp. 1735-1742
Author(s):  
文如莲 WEN Ru-lian ◽  
胡晓龙 HU Xiao-long ◽  
高 升 GAO Sheng ◽  
梁思炜 LIANG Shi-wei ◽  
王 洪 WANG Hong
Keyword(s):  
Conductive Layer ◽  
Metal Doped ◽  
Uv Leds ◽  
Transparent Conductive Layer

scholarly journals Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 403 ◽  
Author(s):  
Siwei Liang ◽  
Quanbin Zhou ◽  
Xianhui Li ◽  
Ming Zhong ◽  
Hong Wang
Keyword(s):  
Optical Properties ◽  
Ultraviolet Light ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Contact Layer ◽  
Electrical And Optical Properties ◽  
Promising Alternative ◽  
Light Emitting ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes

We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga2O3/Ag/Ga2O3 multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga2O3/Ag/Ga2O3 multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga2O3/Ag/Ga2O3 multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10−3 Ω·cm2. These results show that the proposed ITO/Ga2O3/Ag/Ga2O3 multilayer is a promising alternative as a p-type electrode for UV LEDs.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties

Electrical and Optical Properties of Polypyrrole and Polyaniline Blends

2020 ◽  
Vol 62 (6) ◽  
pp. 680-690
Author(s):  
Tekalign A. Tikish ◽  
Ashok Kumar ◽  
Jung Yong Kim
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties

Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates

2019 ◽  
Vol 672 ◽  
pp. 114-119 ◽  
Author(s):  
Michal Kučera ◽  
Adam Adikimenakis ◽  
Edmund Dobročka ◽  
Róbert Kúdela ◽  
Milan Ťapajna ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Substrates ◽  
Electrical And Optical Properties
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