3.2-MP Back-Illuminated Polarization Image Sensor With Four-Directional Air-Gap Wire Grid and 2.5- $\mu$ m Pixels

2018 ◽  
Vol 65 (6) ◽  
pp. 2544-2551 ◽  
Author(s):  
Yasushi Maruyama ◽  
Takashi Terada ◽  
Tomohiro Yamazaki ◽  
Yusuke Uesaka ◽  
Motoaki Nakamura ◽  
...  
Keyword(s):  
Image Sensor ◽  
Air Gap ◽  
Wire Grid ◽  
Polarization Image ◽  
Back Illuminated

Four-directional pixel-wise polarization CMOS image sensor using air-gap wire grid on 2.5-μm back-illuminated pixels

2016 ◽  
Author(s):  
Tomohiro Yamazaki ◽  
Yasushi Maruyama ◽  
Yusuke Uesaka ◽  
Motoaki Nakamura ◽  
Yoshihisa Matoba ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Air Gap ◽  
Wire Grid ◽  
Back Illuminated

Bioinspired Focal-Plane Polarization Image Sensor Design: From Application to Implementation

2014 ◽  
Vol 102 (10) ◽  
pp. 1435-1449 ◽  
Author(s):  
Milin Zhang ◽  
Xiaotie Wu ◽  
Nan Cui ◽  
Nader Engheta ◽  
Jan Van der Spiegel
Keyword(s):  
Focal Plane ◽  
Image Sensor ◽  
Sensor Design ◽  
Polarization Image

scholarly journals Field-Curvature Correction According to the Curvature of a CMOS Image-Sensor Using Air-Gap Optimization

2015 ◽  
Vol 19 (6) ◽  
pp. 658-664 ◽  
Author(s):  
Jong-Hoon Kwon ◽  
Hyug-Gyo Rhee ◽  
Young-Sik Ghim ◽  
Yun-Woo Lee
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Air Gap ◽  
Curvature Correction ◽  
Field Curvature

Integrated real-time polarization image sensor based on UV-NIL and calibration method

2022 ◽  
pp. 1-1
Author(s):  
Chuanlong Guan ◽  
Ran Zhang ◽  
Jinkui Chu ◽  
Ze Liu ◽  
Yuanyi Fan ◽  
...  
Keyword(s):  
Real Time ◽  
Calibration Method ◽  
Image Sensor ◽  
Polarization Image

scholarly journals A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 798 ◽  
Author(s):  
Sanggwon Lee ◽  
Keita Yasutomi ◽  
Ho Hai Nam ◽  
Masato Morita ◽  
Shoji Kawahito
Keyword(s):  
Near Infrared ◽  
Time Of Flight ◽  
Image Sensor ◽  
Light Signal ◽  
Silicon On Insulator ◽  
Light Power ◽  
Fully Depleted ◽  
Range Resolution ◽  
Back Illuminated ◽  
Detector Technology

A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.

A 1/4-inch 3.9Mpixel low-power event-driven back-illuminated stacked CMOS image sensor

2018 ◽  
Author(s):  
Oichi Kumagai ◽  
Atsumi Niwa ◽  
Katsuhiko Hanzawa ◽  
Hidetaka Kato ◽  
Shinichiro Futami ◽  
...  
Keyword(s):  
Low Power ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Event Driven ◽  
Back Illuminated
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