Analysis of Drain Current Local Variability of an n-Channel E $\delta$ DC MOSFET Due to RDD Considering Inversion Charge and Correlated Mobility Fluctuations

2018 ◽  
Vol 65 (4) ◽  
pp. 1267-1275 ◽  
Author(s):  
Sarmista Sengupta ◽  
Soumya Pandit
Keyword(s):  
Drain Current ◽  
Inversion Charge ◽  
Local Variability ◽  
Mobility Fluctuations

ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

2013 ◽  
Vol 12 (01) ◽  
pp. 1350005 ◽  
Author(s):  
VIMALA PALANICHAMY ◽  
N. B. BALAMURUGAN
Keyword(s):  
Numerical Solutions ◽  
Inversion Layer ◽  
Drain Current ◽  
Quantum Effects ◽  
Schrodinger Equations ◽  
Double Gate ◽  
Schrödinger Equations ◽  
Inversion Charge ◽  
Physical Insight ◽  
Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

scholarly journals Compact modeling of strained GAA SiNW

2019 ◽  
Vol 14 (1) ◽  
pp. 241
Author(s):  
Fatimah K. A Hamid ◽  
N. Ezaila Alias ◽  
R. Ismail ◽  
M. Anas Razali
Keyword(s):  
Threshold Voltage ◽  
Silicon Nanowire ◽  
Current Model ◽  
Drain Current ◽  
Cmos Technology ◽  
Compact Model ◽  
Compact Modeling ◽  
Smoothing Function ◽  
Inversion Charge ◽  
A Charge

<span>Strain-based on advanced MOSFET is a promising candidate for the future of CMOS technology. A numerical model is not favorable compared to a compact model because it cannot be integrated into most simulator software. Thus, a compact model is proposed to overcome the shortcomings in the analytical model. In this paper, a charge-based compact model is presented for long-channel strained Gate-All-Around Silicon Nanowire (GAA SiNW) from an undoped channel to a doped body. The model derivation is based on an inversion charge which has been solved explicitly using the smoothing function. The drain current model is formulated from Pao Sah’s dual integral which is formed in terms of inversion charge at the drain and source terminals. The proposed model has been extensively verified with the numerical simulator data. The strained effect on the electrical parameters are studied based on inversion charge, threshold voltage and current-voltage (I-V) characteristics. Results show that the current, the inversion charge and the threshold voltage can be greatly improved by the strain. The threshold voltage was reduced approximately 40% from the conventional GAA SiNW. Moreover, the inversion charge was improved by 30 % and the on-state current has doubled compared to unstrained device.</span>

Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

2017 ◽  
Vol 128 ◽  
pp. 31-36 ◽  
Author(s):  
T.A. Karatsori ◽  
C.G. Theodorou ◽  
S. Haendler ◽  
C.A. Dimitriadis ◽  
G. Ghibaudo
Keyword(s):  
Drain Current ◽  
Saturation Region ◽  
Local Variability

Analytical modeling of quantization effects in surrounding-gate MOSFETs

2013 ◽  
Vol 33 (1/2) ◽  
pp. 630-644 ◽  
Author(s):  
Vimala Palanichamy ◽  
N.B. Balamurugan
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
Quantum Effects ◽  
Physical Models ◽  
Threshold Region ◽  
Content Type ◽  
Surrounding Gate ◽  
Inversion Charge ◽  
The Impact ◽  
Device Operation

Purpose – The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects. Design/methodology/approach – To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results. Findings – This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages. Practical implications – Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures. Originality/value – This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).

Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

2016 ◽  
Vol 118 ◽  
pp. 4-11 ◽  
Author(s):  
E.G. Ioannidis ◽  
S. Haendler ◽  
E. Josse ◽  
N. Planes ◽  
G. Ghibaudo
Keyword(s):  
Drain Current ◽  
Local Variability

Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs

2020 ◽  
Vol 61 ◽  
pp. 88-96
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Charge Density ◽  
Current Model ◽  
Mathematical Expression ◽  
Drain Current ◽  
Quantum Effects ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Double Gate ◽  
Inversion Charge

In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.

Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET

2019 ◽  
Vol 59 ◽  
pp. 137-148 ◽  
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Inversion Layer ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Quantum Confinement Effects ◽  
Charge Model ◽  
Proposed Model ◽  
Inversion Charge ◽  
Quantum Version ◽  
Quantum Mechanical Effects

The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and inversion charge model. By using these models the quantum version of inversion layer capacitance, inversion charge distribution function and Drain current expressions are modelled and the performance evaluation of the developed model is compared with Silicon channel GAA-MOSFET. Analytically modelled expressions are verified by comparing the model with simulation results.

Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

2020 ◽  
Vol 170 ◽  
pp. 107835
Author(s):  
T.A. Oproglidis ◽  
D.H. Tassis ◽  
A. Tsormpatzoglou ◽  
G. Ghibaudo ◽  
C.A. Dimitriadis
Keyword(s):  
Drain Current ◽  
Compact Model ◽  
Variability Analysis ◽  
Local Variability
Sign in / Sign up

Export Citation Format

Share Document