Minority Carrier Injection in High-Barrier Si-Schottky Diodes

2018 ◽  
Vol 65 (4) ◽  
pp. 1276-1282 ◽  
Author(s):  
Gaurav Gupta ◽  
Satadal Dutta ◽  
Sourish Banerjee ◽  
Raymond J. E. Hueting
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection

Minority carrier injection limited current in Re/4H-SiC Schottky diodes

2010 ◽  
Vol 207 (6) ◽  
pp. 1509-1513 ◽  
Author(s):  
K. Sarpatwari ◽  
S. E. Mohney ◽  
S. Ashok ◽  
O. O. Awadelkarim
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Limited Current

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Current Voltage Characteristics

Minority carrier injection in GeAg Schottky diodes

1976 ◽  
Vol 19 (4) ◽  
pp. 289-290 ◽  
Author(s):  
J.C. Manifacier ◽  
J.P. Fillard
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 425-428 ◽  
Author(s):  
R.R Ciechonski ◽  
Samuele Porro ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova
Keyword(s):  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Depth Profiling ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Transient Spectroscopy ◽  
State Resistance ◽  
Thick Layers

Specific on-resistance Ron estimated from current density-voltage characteristics of Schottky diodes on thick layers exhibits variations from tens of mW.cm2 to tens of W.cm2 for different doping levels. In order to understand the occurrence of high on-state resistance, Schottky barrier heights were first estimated for both forward and reverse bias with the application of thermionic emission theory and were in agreement with a literature reported values. Decrease in mobility with the temperature was observed and its dependencies of T–1.3 and T–2.0 for moderately doped and low doped samples respectively were estimated. From deep level measurements by Minority Carrier Transient Spectroscopy, an influence of shallow boron related levels and D-center on dependence of on-state resistance was observed, being more pronounced in low doped samples. Similar tendency was observed in depth profiling of Ron. This suggests a major role of boron in a compensation mechanism thus resulting in high Ron.

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

2020 ◽  
Vol 1004 ◽  
pp. 801-807
Author(s):  
Takaaki Tominaga ◽  
Shiro Hino ◽  
Yohei Mitsui ◽  
Junichi Nakashima ◽  
Koutarou Kawahara ◽  
...  
Keyword(s):  
High Frequency ◽  
Minority Carrier ◽  
Total Loss ◽  
Loss Reduction ◽  
Carrier Injection ◽  
Power Module ◽  
Chip Area ◽  
Dc Characteristics ◽  
High Frequency Operation ◽  
Switching Characteristics

A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-MOSFET due to larger cell pitch, superior switching characteristics of SiC-MOSFET embedding SBD, which are due to smaller total chip area than that of SiC-MOSFET coupled with external SBD and due to elimination of recovery charge by minority carrier injection compared with SiC-MOSFET utilizing its body diode, enable the total loss reduction especially for high frequency operation.

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