Effect of Hydrogen on Defects of AlGaN/GaN HEMTs Characterized by Low-Frequency Noise

2018 ◽  
Vol 65 (4) ◽  
pp. 1321-1326 ◽  
Author(s):  
Y. Q. Chen ◽  
Y. C. Zhang ◽  
Y. Liu ◽  
X. Y. Liao ◽  
Y. F. En ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemts

Low frequency noise sources in AlGaN/GaN HEMTs

1999 ◽  
Author(s):  
J. A. Garrido ◽  
F. Calle ◽  
E. Muñoz ◽  
I. Izpura ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Gan Hemts

Radiation Effects and Low-Frequency Noise in AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
En Xia Zhang ◽  
Sokrates T. Pantelides
Keyword(s):  
Radiation Effects ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemts

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

2017 ◽  
Vol 38 (8) ◽  
pp. 1109-1112 ◽  
Author(s):  
Nandha Kumar Subramani ◽  
Julien Couvidat ◽  
Ahmad Al Hajjar ◽  
Jean-Christophe Nallatamby ◽  
Didier Floriot ◽  
...  
Keyword(s):  
Physical Properties ◽  
Low Frequency ◽  
Deep Levels ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemts ◽  
Noise Characterization

Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths

2004 ◽  
Vol 831 ◽  
Author(s):  
Shrawan. K. Jha ◽  
Bun. H. Leung ◽  
Charles C. Surya ◽  
Heins Schweizer ◽  
Manfred. H. Pilkhuhn
Keyword(s):  
Low Frequency ◽  
Dry Etching ◽  
Frequency Noise ◽  
Noise Power ◽  
Hot Electron ◽  
Low Frequency Noise ◽  
Noise Power Spectral Density ◽  
Noise Measurements ◽  
Gan Hemts ◽  
Gate Recess

ABSTRACTLow-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(ƒ), of the devices were found to show 1/ƒ dependence. A comparison of SV(ƒ) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.

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