Performance Evaluation and Optimization of Single Layer MoS2Double Gate Transistors With Schottky Barrier Contacts

2017 ◽  
Vol 64 (7) ◽  
pp. 2999-3006 ◽  
Author(s):  
Lang Zeng ◽  
Deming Zhang ◽  
Tianqi Gao ◽  
Fanghui Gong ◽  
Xiaowan Qin ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Schottky Barrier ◽  
Single Layer

Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation

2016 ◽  
Vol 18 (45) ◽  
pp. 31027-31032 ◽  
Author(s):  
Won Seok Yun ◽  
J. D. Lee
Keyword(s):  
Schottky Barrier ◽  
Single Layer ◽  
Metal Substrates ◽  
Vacancy Defects ◽  
Magnetic Metal ◽  
Atomic Vacancy

The Schottky barrier and magnetism of the single-layer MoS2 on magnetic metal substrates can be tuned by atomic vacancy defects and hydrogenation.

scholarly journals Development of a Full-Depth Wheel Tracking Test for Asphalt Pavement Structure: Methods and Performance Evaluation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Hui Wang ◽  
Zepeng Fan ◽  
Jiupeng Zhang
Keyword(s):  
Performance Evaluation ◽  
Asphalt Pavement ◽  
Asphalt Mixture ◽  
Single Layer ◽  
Test Method ◽  
Shanxi Province ◽  
Wheel Tracking Test ◽  
Pavement Structure ◽  
Pavement Structures ◽  
Wheel Tracking

The rutting performance of asphalt pavement structure relies on the high temperature properties of asphalt mixture as well as the pavement structure and thickness. In order to investigate the influence of the structure and thickness, a full-depth wheel tracking test is developed in this research by improving the conventional wheel tracking test apparatus. The newly proposed test method is capable of varying its load speed and load size, controlling its specimen temperature gradient, and simulating the support conditions of actual asphalt pavement. The full-depth wheel tracking test based rutting performance evaluation of different asphalt pavement structures indicates that it is not reasonable to explain the rutting performance of asphalt pavement structure from the point of view of single-layer asphalt mixture rutting performance. The developed full-depth wheel tracking test can be used to distinguish rutting performance of different asphalt pavement structures, and two of five typical asphalt pavement structures commonly used in Shanxi Province were suggested for use in practical engineering.

Isolation Performance Evaluation of Compressor Vibration Isolating Systems Based on LMS Test. Lab Signature

2011 ◽  
Vol 130-134 ◽  
pp. 1220-1225 ◽  
Author(s):  
Li Zhang ◽  
Hao Chen ◽  
Yan Jue Gong ◽  
Hong Wu ◽  
Shuo Zhang
Keyword(s):  
Performance Evaluation ◽  
Evaluation Criteria ◽  
Maximum Velocity ◽  
Single Layer ◽  
National Standard ◽  
Vibration Velocity ◽  
Upward Trend ◽  
Refrigeration Unit ◽  
Comparison Results ◽  
Isolation Performance

In order to reduce vibration and noise of the compressor used in small and medium-sized refrigeration unit, this paper designs different vibration isolating systems and carries out experiment of isolation performance evaluation based on LMS Test. Lab Signature software. The comparison results of four different vibration isolating systems show that the peak values of vibration velocity response in each system mainly appear at 25Hz, 50Hz, 75Hz and 100Hz, and the maximum velocity does not exceed 22mm/s which is less than the maximum allowed by the national standard[1]. And the Vibration Level Difference (VLD) is taken as evaluation criteria for isolating vibration, that of single-layer vibration isolating system is within 10-20dB, and that of double-layer vibration isolating system is within 20-35dB. Furthermore with the increase of middle-mass, the VLD has a clear upward trend.

scholarly journals Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2346
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Image Force ◽  
Transition Metal Dichalcogenide ◽  
Metal Interface ◽  
Effect Transistor

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.

Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts

1981 ◽  
Vol 10 ◽  
Author(s):  
B.-Y. Tsaur ◽  
D. J. Silversmith ◽  
R. W. Mountain ◽  
C. H. Anderson
Keyword(s):  
Schottky Barrier ◽  
Single Layer ◽  
Electrical Characteristics ◽  
Contact Interface ◽  
Large Area ◽  
Leakage Currents ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
A New Technique ◽  
Multilayer Metallization

The properties of PtSi-Si Schottky barrier contacts formed by a new technique employing multilayer metallization are compared with those of contacts prepared by the conventional single-layer metallization method. The multilayer technique permits the formation of very shallow contacts without any limitation being placed on the thickness of the PtSi layer. For a PtSi layer of given thickness the PtSi-Si contact interface obtained by this technique is more uniform than the interface formed by annealing a single layer of platinum on silicon. The interfacial uniformity is independent of PtSi thickness for shallow PtSi-Si contacts produced by the multilayer technique, while for conventional contacts the uniformity decreases with increasing PtSi thickness. Large-area (9.4 × 10−3 cm2) diodes utilizing shallow PtSi-Si contacts about 200 Å deep have been fabricated without guard rings. These diodes exhibit near-ideal forward current-voltage characteristics, low reverse leakage currents (less than 5 nA at −10 V) and high breakdown voltages (over −90 V). These characteristics are superior to those of diodes using conventional PtSi-Si contacts.

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