TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe
2017 ◽
Vol 64
(2)
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pp. 500-506
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1984 ◽
Vol 42
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pp. 282-283
1988 ◽
Vol 46
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pp. 434-435
Keyword(s):
1988 ◽
Vol 46
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pp. 256-257
Keyword(s):
1988 ◽
Vol 46
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pp. 788-789
1975 ◽
Vol 33
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pp. 58-59
1984 ◽
Vol 42
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pp. 686-687
1988 ◽
Vol 46
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pp. 626-627
1992 ◽
Vol 50
(1)
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pp. 88-89