Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

2017 ◽  
Vol 64 (3) ◽  
pp. 832-839 ◽  
Author(s):  
Huaxing Jiang ◽  
Chao Liu ◽  
Yuying Chen ◽  
Xing Lu ◽  
Chak Wah Tang ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Gate Dielectric

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

2004 ◽  
Vol 831 ◽  
Author(s):  
W. Wang ◽  
J. Derluyn ◽  
M. Germain ◽  
I. Dewolf ◽  
M. Leys ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Algan Layer ◽  
Polarization Model ◽  
Quantitative Results ◽  
Gan Heterostructure ◽  
Interesting Behavior

ABSTRACTThe effect of surface passivation on undoped AlGaN/GaN heterostructures using SiO2, Al2O3, Ta2O5 and Si3N4 as a function of layer thickness is presented. It is found that all of the oxides caused decreased 2DEG carrier concentration with increasing thickness of the respective oxide layers between the gate and AlGaN layer. On the contrary, the 2DEG carrier concentration increased strongly with increasing Si3N4 layer thickness. An elementary polarization model was used to fit the behavior for all materials and thicknesses leading to quantitative results. The fitting suggests that the effect of the oxides and Si3N4 on the 2DEG carrier concentration can be explained by the differences between them with respect to charge accumulation at the AlGaN/dielectric interface. High temperature in-situ deposited Si3N4 especially shows interesting behavior by bowing measurements as it also adds strain which increases piezoelectric polarization charge in AlGaN layer, so that increases the charge density in the 2DEG.

Surface Passivation of Bare Aluminum Nanoparticles using Perfluoroalkyl Carboxylic Acids

2003 ◽  
Vol 800 ◽  
Author(s):  
R. Jason Jouet ◽  
Andrea D. Warren ◽  
David M. Rosenberg ◽  
Victor J. Bellitto
Keyword(s):  
Composite Material ◽  
Surface Passivation ◽  
Catalytic Decomposition ◽  
Self Assembled Monolayers ◽  
Aluminum Nanoparticles ◽  
Wet Chemistry ◽  
Al Nanoparticles ◽  
Polar Organic Solvents ◽  
Assembled Monolayers

AbstractSurface passivation of unpassivated Al nanoparticles has been realized using self assembled monolayers (SAMs). Nanoscale Al particles were prepared in solution by catalytic decomposition of H3Al•NMe3 or H3Al•N(Me)Pyr by Ti(OiPr)4 and coated in situ using a perfluoroalkyl carboxylic acid SAM. Because the Al particles are prepared using wet chemistry techniques and coated in solution, they are free of oxygen passivation. This SAM coating passivates the aluminum and seems to prevent the oxidation of the particles in air and renders the composite material, to some extent, soluble in polar organic solvents such as diethyl ether. Characterization data including SEM, TEM, TGA, and ATR-FTIR of prepared materials is presented.

AlN/GaN MISHEMTs on Si with in-situ SiN as gate dielectric for power amplifiers in mobile SoCs

2021 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Wenrui Hu ◽  
Yu Gao ◽  
Hui Teng Tan ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Gate Dielectric ◽  
Rf Power Amplifiers ◽  
Maximum Output ◽  
High Electron ◽  
Rf Power ◽  
Power Added Efficiency ◽  
5 Ghz ◽  
Mobile Soc

Abstract AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in-situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of Vd = 3.5 V/5 V, the 90-nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency (PAE) of 62%/58%, a maximum output power density (Poutmax) of 0.44 W/mm/0.84 W/mm and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in-situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.

ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

2010 ◽  
Vol 27 (12) ◽  
pp. 128504 ◽  
Author(s):  
Wang Zhao ◽  
Xin Dong ◽  
Long Zhao ◽  
Zhi-Feng Shi ◽  
Jin Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric
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