Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

2017 ◽  
Vol 64 (3) ◽  
pp. 805-808 ◽  
Author(s):  
Dong Ji ◽  
Matthew A. Laurent ◽  
Anchal Agarwal ◽  
Wenwen Li ◽  
Saptarshi Mandal ◽  
...  
Keyword(s):  
Blocking Layer ◽  
Current Blocking Layer ◽  
Current Blocking ◽  
Mg Doped

A short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer

1997 ◽  
Vol 9 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Tae-Geun Kim ◽  
Kyung-Hyun Park ◽  
Eun Kyu Kim ◽  
Suk-Ki Min ◽  
Jung-Ho Park
Keyword(s):  
Quantum Wire ◽  
Wire Array ◽  
Blocking Layer ◽  
Short Period ◽  
Current Blocking Layer ◽  
Current Blocking

Effect of Interdigitated SiO2 Current Blocking Layer on External Quantum Efficiency of High Power LEDs

2017 ◽  
Vol 38 (6) ◽  
pp. 786-792 ◽  
Author(s):  
刘梦玲 LIU Meng-ling ◽  
高艺霖 GAO Yi-lin ◽  
胡红坡 HU Hong-po ◽  
刘星童 LIU Xing-tong ◽  
吕家将 LYU Jia-jiang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Power ◽  
External Quantum Efficiency ◽  
Blocking Layer ◽  
Current Blocking Layer ◽  
Current Blocking

Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer

2013 ◽  
Vol 34 (7) ◽  
pp. 918-923 ◽  
Author(s):  
郭伟玲 GUO Wei-ling ◽  
俞鑫 YU Xin ◽  
刘建朋 LIU Jian-peng ◽  
樊星 FAN Xing ◽  
白俊雪 Bai Jun-xue
Keyword(s):  
Light Emitting Diodes ◽  
Optical Characteristics ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

scholarly journals Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 241 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Nan Sun ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Blocking Layer ◽  
Vertical Field ◽  
Current Blocking Layer ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

Improved Light Extraction of GaN-Based Light-Emitting Diodes by an Ion-Damaged Current Blocking Layer

2012 ◽  
Vol 51 ◽  
pp. 082102 ◽  
Author(s):  
Keon Hwa Lee ◽  
Ki Man Kang ◽  
Gi Cheol Hong ◽  
Seung Hwan Kim ◽  
Woo Young Sun ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Extraction ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes

2000 ◽  
Author(s):  
Guohong Wang ◽  
Xiaoyu Ma ◽  
Yufang Zhang ◽  
Shutang Wang ◽  
Yuzhang Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
High Brightness ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation

1982 ◽  
Vol 21 (Part 2, No. 10) ◽  
pp. L639-L641 ◽  
Author(s):  
Seiji Uchiyama ◽  
Kazunori Moriki ◽  
Kenichi Iga ◽  
Seijiro Furukawa
Keyword(s):  
Blocking Layer ◽  
Current Blocking Layer ◽  
Current Blocking ◽  
A Current

scholarly journals InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer

2013 ◽  
Vol 469 (2151) ◽  
pp. 20120652 ◽  
Author(s):  
Liancheng Wang ◽  
Yiyun Zhang ◽  
Xiao Li ◽  
Zhiqiang Liu ◽  
Lian Zhang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Optical Power ◽  
Blocking Layer ◽  
Current Crowding ◽  
Transparent Conductor ◽  
Acid Modification ◽  
Spreading Effect ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Vertical light-emitting diodes (VLEDs) with a highly reflective membrane (HRM) as current blocking layer (CBL) and a graphene transparent conductive layer (TCL) have been fabricated and characterized. High reflectance of HRM and high transmittance of graphene ensure less loss of the optical power. The VLEDs show improved optical output and less efficiency droop, thanks to the current spreading effect of HRM CBL and graphene TCL by preventing current crowding under the top electrode and thus increasing the internal and external quantum efficiency. With further acid modification, forward electrical characteristics of VLEDs are improved.

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