scholarly journals Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

2016 ◽  
Vol 63 (11) ◽  
pp. 4279-4287 ◽  
Author(s):  
Zhongqiang Wang ◽  
Stefano Ambrogio ◽  
Simone Balatti ◽  
Scott Sills ◽  
Alessandro Calderoni ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

2015 ◽  
Vol 1 (8) ◽  
pp. 1500061 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Yung-Chang Lin ◽  
Hung-Wei Tsai ◽  
Wen-Chun Yen ◽  
Chia-Wei Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Resistive Switching ◽  
Point Contact ◽  
Resistive Switching Memory ◽  
Metal Oxide Layer ◽  
Switching Memory
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