N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

2016 ◽  
Vol 63 (7) ◽  
pp. 2838-2843 ◽  
Author(s):  
Yong Huang ◽  
Jing-Ping Xu ◽  
Lu Liu ◽  
Pui-To Lai ◽  
Wing-Man Tang
Keyword(s):  
Gate Dielectric ◽  
Passivation Layer ◽  
Mos Capacitor ◽  
Interface Passivation ◽  
N2 Plasma

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC02 ◽  
Author(s):  
Antonio T. Lucero ◽  
Young-Chul Byun ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Passivation Layer ◽  
X Ray ◽  
Interface Passivation

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

Sign in / Sign up

Export Citation Format

Share Document