scholarly journals Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

2016 ◽  
Vol 63 (6) ◽  
pp. 2242-2247 ◽  
Author(s):  
Ye Tian ◽  
Luigia Lanni ◽  
Ana Rusu ◽  
Carl-Mikael Zetterling
Keyword(s):  
Silicon Carbide ◽  
Differential Amplifier ◽  
Fully Differential

Design and Analysis of an Improvised Fully Differential Amplifier

2020 ◽  
pp. 899-908
Author(s):  
Swagata Devi ◽  
Koushik Guha ◽  
Naushad Manzoor Laskar ◽  
Sourav Nath ◽  
Krishna Lal Baishnab
Keyword(s):  
Differential Amplifier ◽  
Fully Differential

Low-Voltage CMOS Single Ended and Fully Differential Amplifier with Programmable Gain.

2007 ◽  
Author(s):  
Jose Luis Ruiz-Chavira ◽  
Jaime Ramirez-Angulo ◽  
Antonio J. Lopez-Martin ◽  
Ramon G. Carvajal ◽  
Antonio Torralba
Keyword(s):  
Low Voltage ◽  
Differential Amplifier ◽  
Fully Differential ◽  
Programmable Gain

scholarly journals Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications

2018 ◽  
Vol 8 (2) ◽  
pp. 933
Author(s):  
Tuan Anh Vu ◽  
Kyoya Takano ◽  
Minoru Fujishima
Keyword(s):  
Wireless Communications ◽  
Low Power ◽  
Supply Voltage ◽  
Differential Amplifier ◽  
Center Frequency ◽  
Chip Area ◽  
Fully Differential ◽  
Measurement Results ◽  
Cmos Amplifier ◽  
Peak Gain

This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.

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