First Principle Analysis of (10-Boranylanthracene-9-yl)borane-Based Molecular Single-Electron Transistor for High-Speed Low-Power Electronics

2016 ◽  
Vol 63 (3) ◽  
pp. 1232-1238 ◽  
Author(s):  
Boddepalli SanthiBhushan ◽  
Mohammad Shahzad Khan ◽  
Anurag Srivastava ◽  
Mohammad Shahid Khan
Keyword(s):  
Low Power ◽  
Power Electronics ◽  
High Speed ◽  
Single Electron ◽  
Single Electron Transistor ◽  
First Principle ◽  
Low Power Electronics

A PSPICE Fast Model for the Single Electron Transistor

2019 ◽  
pp. 08-23
Author(s):  
Lobna Osman ◽  
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
Electron Tunneling ◽  
Electronic Devices ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Electrical Characteristics ◽  
Nanoelectronic Devices ◽  
Low Power Dissipation

Motivated by the merits of low power dissipation, ultra-small size, and high speed of many nanoelectronic devices, They have been demonstrated to ensure future progress. Single-electron devices became one of the most important nanoelectronic devices due to their interesting electrical characteristics and behavior. Many research efforts moved to describe their electrical characteristics to use them with conventional electronic devices. This paper deals with modeling and simulation of such new electronic devices. This paper presents a model for the Single Electron Transistor (SET) and its application in simulating hybrid SET/MOS ADC and DAC converters. This model uses the orthodox theory of single-electron tunneling and determines the average current through the transistor. The proposed model is more flexible that is valid for a large range of drain to source voltage, valid for single or multi-gate SET and symmetric or asymmetric SET. Finally, using this model with MOSFET transistors to realize multi-bit Analog-to-Digital Converters (ADC) and Digital-to-Analog Converters (DAC). The hybrid n-bit DAC nano-circuits are simulated for (n=4 and 8) using Orcad Capture PSPICE. The performance of the SET/MOS hybrid n-bit ADC circuits were simulated (for n=3 and 8). The results show that the transient operation of hybrid SET/MOS circuit-based DAC could successfully operate at 1000K while ADC could operate at 144K. This performance can be compared with the pure SET circuits, the proposed converter circuits have been enhanced in the drive capability and the power dissipation. Compared with the other SET/MOS hybrid circuit, the implemented converter circuits have low simulation time, high speed, high load drivability, and low power dissipation.

High speed, low power electronics using Sb-based semiconductors

2004 ◽  
Author(s):  
R. Magno ◽  
J.B. Boos ◽  
B.R. Bennett ◽  
K. Ikossi ◽  
E.R. Glaser ◽  
...  
Keyword(s):  
Low Power ◽  
Power Electronics ◽  
High Speed ◽  
Low Power Electronics

Two-dimensional spintronics for low-power electronics

2019 ◽  
Vol 2 (7) ◽  
pp. 274-283 ◽  
Author(s):  
Xiaoyang Lin ◽  
Wei Yang ◽  
Kang L. Wang ◽  
Weisheng Zhao
Keyword(s):  
Low Power ◽  
Power Electronics ◽  
Two Dimensional ◽  
Low Power Electronics

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

2015 ◽  
Vol 36 (4) ◽  
pp. 294-296 ◽  
Author(s):  
M. H. Lee ◽  
Y.-T. Wei ◽  
K.-Y. Chu ◽  
J.-J. Huang ◽  
C.-W. Chen ◽  
...  
Keyword(s):  
Low Power ◽  
Power Electronics ◽  
Steep Slope ◽  
Low Power Electronics

Batteries for low power electronics

1995 ◽  
Vol 83 (4) ◽  
pp. 687-693 ◽  
Author(s):  
R.A. Powers
Keyword(s):  
Low Power ◽  
Power Electronics ◽  
Low Power Electronics
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