Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

Yogesh Pratap; Subhasis Haldar; Radhey Shyam Gupta; Mridula Gupta

doi:10.1109/ted.2015.2441777

Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2441777 ◽

2015 ◽

Vol 62 (8) ◽

pp. 2598-2605 ◽

Cited By ~ 14

Author(s):

Yogesh Pratap ◽

Subhasis Haldar ◽

Radhey Shyam Gupta ◽

Mridula Gupta

Keyword(s):

Threshold Voltage ◽

Nanowire Transistor ◽

Junctionless Nanowire Transistor

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Low temperature electric field dependent mobility of the current oscillation regime in silicon junctionless nanowire transistor

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict49897.2020.9278148 ◽

2020 ◽

Author(s):

Chong Yang ◽

Wei-Hua Han ◽

Jun-Dong Chen ◽

Xiao-Di Zhang ◽

Yang-Yan Guo

Keyword(s):

Low Temperature ◽

Electric Field ◽

Current Oscillation ◽

Oscillation Regime ◽

Nanowire Transistor ◽

Field Dependent ◽

Junctionless Nanowire Transistor

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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Solid-State Electronics ◽

10.1016/j.sse.2011.06.004 ◽

2011 ◽

Vol 65-66 ◽

pp. 33-37 ◽

Cited By ~ 211

Author(s):

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A. Kranti ◽

R. Yan ◽

C.W. Lee ◽

I. Ferain ◽

...

Keyword(s):

Design Guidelines ◽

Nanowire Transistor ◽

Junctionless Nanowire Transistor

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Impact of high-κgate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate-all-around nanowire transistor

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2015 ◽

2014 ◽

Vol 28 (4) ◽

pp. 389-403 ◽

Cited By ~ 9

Author(s):

Saeed Uz Zaman Khan ◽

Md. Shafayat Hossain ◽

Fahim Ur Rahman ◽

Rifat Zaman ◽

Md. Obaidul Hossen ◽

...

Keyword(s):

Threshold Voltage ◽

Physical Parameters ◽

Nanowire Transistor ◽

Channel Gate ◽

Long Channel

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Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2009.2033380 ◽

2011 ◽

Vol 10 (1) ◽

pp. 121-128 ◽

Cited By ~ 13

Author(s):

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Santanu Mahapatra

Keyword(s):

Threshold Voltage ◽

Silicon Nanowire ◽

Short Channel ◽

Nanowire Transistor

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3D Double-Gate Junctionless Nanowire Transistor-Based Pass Transistor Logic Circuits for Digital Applications

IETE Journal of Research ◽

10.1080/03772063.2019.1649203 ◽

2019 ◽

pp. 1-8

Author(s):

Achinta Baidya ◽

Trupti R. Lenka ◽

Srimanta Baishya

Keyword(s):

Logic Circuits ◽

Double Gate ◽

Nanowire Transistor ◽

Pass Transistor ◽

Pass Transistor Logic ◽

Junctionless Nanowire Transistor

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Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect

2012 7th International Conference on Electrical and Computer Engineering ◽

10.1109/icece.2012.6471641 ◽

2012 ◽

Cited By ~ 1

Author(s):

Rifat Zaman ◽

Saeed Uz Zaman Khan ◽

Md. Shafayat Hossain ◽

Fahim Ur Rahman ◽

Md. Obaidul Hossen ◽

...

Keyword(s):

Threshold Voltage ◽

Mechanical Effect ◽

Quantum Mechanical ◽

Quantum Mechanical Effect ◽

Nanowire Transistor ◽

Self Consistent

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Self-consistent determination of quantum-mechanical threshold voltage of Gate-All-Around Junction Less Nanowire Transistor

2016 9th International Conference on Electrical and Computer Engineering (ICECE) ◽

10.1109/icece.2016.7853874 ◽

2016 ◽

Author(s):

Nujhat Tasneem ◽

Md. Mohsinur Rahman Adnan ◽

Md. Samzid Bin Hafiz ◽

Quazi D.M. Khosru

Keyword(s):

Threshold Voltage ◽

Quantum Mechanical ◽

Nanowire Transistor ◽

Mechanical Threshold ◽

Self Consistent

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Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis

Journal of Electronic Materials ◽

10.1007/s11664-018-6075-2 ◽

2018 ◽

Vol 47 (5) ◽

pp. 2679-2686 ◽

Cited By ~ 4

Author(s):

J. Charles Pravin ◽

P. Prajoon ◽

Flavia Princess Nesamania ◽

G. Srikesh ◽

P. Senthil Kumar ◽

...

Keyword(s):

Drain Current ◽

Current Analysis ◽

Nanowire Transistor ◽

High K ◽

Junctionless Nanowire Transistor

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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

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10.1088/1674-1056/28/6/066804 ◽

2019 ◽

Vol 28 (6) ◽

pp. 066804

Author(s):

Ya-Mei Dou ◽

Wei-Hua Han ◽

Yang-Yan Guo ◽

Xiao-Song Zhao ◽

Xiao-Di Zhang ◽

...

Keyword(s):

Temperature Dependent ◽

Nanowire Transistor ◽

Doped Silicon ◽

Junctionless Nanowire Transistor

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III–V Junctionless Nanowire Transistor with High-k Dielectric Material and Schottky Contacts

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10.1166/jno.2017.2099 ◽

2017 ◽

Vol 12 (9) ◽

pp. 925-931 ◽

Cited By ~ 2

Author(s):

Neel Chatterjee ◽

Akriti Gupta ◽

Sujata Pandey

Keyword(s):

Dielectric Material ◽

Schottky Contacts ◽

Nanowire Transistor ◽

High K ◽

High K Dielectric ◽

Junctionless Nanowire Transistor

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