Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

2014 ◽  
Vol 61 (9) ◽  
pp. 3199-3205 ◽  
Author(s):  
Mallory Mativenga ◽  
Su Hwa Ha ◽  
Di Geng ◽  
Dong Han Kang ◽  
Ravi K. Mruthyunjaya ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Large Area ◽  
Output Resistance ◽  
Amorphous Ingazno

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

2019 ◽  
Vol 28 (8) ◽  
pp. 087302 ◽  
Author(s):  
Wenxing Huo ◽  
Zengxia Mei ◽  
Yicheng Lu ◽  
Zuyin Han ◽  
Rui Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Amorphous Ingazno

scholarly journals Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

2018 ◽  
Vol 9 ◽  
pp. 2573-2580 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Debye Length ◽  
Pulse Mode ◽  
Gate Insulator ◽  
Negative Bias ◽  
Current Voltage ◽  
Bias Instability ◽  
Amorphous Ingazno

The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T IGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the T IGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the T IGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping V GS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the T IGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

2011 ◽  
Vol 32 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Dongsik Kong ◽  
Hyun-Kwang Jung ◽  
Yongsik Kim ◽  
Minkyung Bae ◽  
Yong Woo Jeon ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno
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