Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures

2013 ◽  
Vol 60 (2) ◽  
pp. 863-869 ◽  
Author(s):  
Takeshi Ishida ◽  
Toshiyuki Mine ◽  
Digh Hisamoto ◽  
Yasuhiro Shimamoto ◽  
Ren-ichi Yamada
Keyword(s):  
Metal Oxide ◽  
Electron Trap ◽  
Hole Trap ◽  
Silicon Structures ◽  
Nitride Oxide

Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

2006 ◽  
Vol 102 (5) ◽  
pp. 810-820 ◽  
Author(s):  
K. A. Nasyrov ◽  
S. S. Shaĭmeev ◽  
V. A. Gritsenko ◽  
J. H. Han ◽  
C. W. Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Hole Injection ◽  
Silicon Structures ◽  
Nitride Oxide

Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1441-1447 ◽  
Author(s):  
Hiroshi Aozasa ◽  
Ichiro Fujiwara ◽  
Akihiro Nakamura ◽  
Yasutoshi Komatsu
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Carrier Traps ◽  
Nitride Oxide

Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

2003 ◽  
Vol 94 (8) ◽  
pp. 5408 ◽  
Author(s):  
Sangmoo Choi ◽  
Myungjun Cho ◽  
Hyunsang Hwang ◽  
Jung Woo Kim
Keyword(s):  
Metal Oxide ◽  
Blocking Layer ◽  
High K ◽  
Nitride Oxide

Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
P. J. Drevinsky ◽  
C. E. Caefer ◽  
S. P. Tobin ◽  
J. C. Mikkelsen ◽  
L. C. Kimerling
Keyword(s):  
Carbon Content ◽  
Oxygen Content ◽  
Boron Concentration ◽  
Electron Trap ◽  
Hole Trap ◽  
Defect Production ◽  
Interstitial Defects ◽  
Defect Reactions ◽  
P Type ◽  
Initial Results

ABSTRACTIntroduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

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