Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

2013 ◽  
Vol 60 (2) ◽  
pp. 670-676 ◽  
Author(s):  
Nikolaos Mavredakis ◽  
Matthias Bucher ◽  
Roland Friedrich ◽  
Antonios Bazigos ◽  
François Krummenacher ◽  
...  
Keyword(s):  
Compact Modeling

Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM

2021 ◽  
pp. 1-7
Author(s):  
Huaiyuan Zhang ◽  
Guofu Niu ◽  
Marnix B. Willemsen ◽  
Andries J. Scholten
Keyword(s):  
Compact Modeling ◽  
Sige Hbt

Self-consistent 2D compact modeling of nanoscale bulk MOSFETs

2007 ◽  
Vol 51 (5) ◽  
pp. 739-748 ◽  
Author(s):  
Alexander Kloes ◽  
Michaela Weidemann
Keyword(s):  
Compact Modeling ◽  
Self Consistent

Compact Modeling of Organic and IGZO TFTs from 150 to 350K

2021 ◽  
Author(s):  
Benjamin Iniguez ◽  
Harold Cortes-Ordonez ◽  
Gerard Ghibaudo ◽  
Antonio Cerdeira ◽  
Magali Estrada
Keyword(s):  
Compact Modeling

scholarly journals Sub-THz and THz SiGe HBT Electrical Compact Modeling

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1397
Author(s):  
Bishwadeep Saha ◽  
Sebastien Fregonese ◽  
Anjan Chakravorty ◽  
Soumya Ranjan Panda ◽  
Thomas Zimmer
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
High Frequency ◽  
State Of The Art ◽  
Sensitivity Study ◽  
Compact Modeling ◽  
Process Technology ◽  
Very High Frequency ◽  
Sige Hbt ◽  
Frequency Behavior

From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

Anomalous GIDL Effect With Back Bias in FinFET: Physical Insights and Compact Modeling

2021 ◽  
pp. 1-7
Author(s):  
Chetan Kumar Dabhi ◽  
Ananda S. Roy ◽  
Lucy Yang ◽  
Yogesh Singh Chauhan
Keyword(s):  
Compact Modeling

Predictive Compact Modeling of Abnormal LDMOS Characteristics Due to Overlap-Length Modification

2020 ◽  
Author(s):  
Takahiro Iizuka ◽  
Dondee Navarro ◽  
Mitiko Miura-Mattausch ◽  
Hidenori Kikuchihara ◽  
Hans Jurgen Mattausch ◽  
...  
Keyword(s):  
Compact Modeling

Wide-band compact modeling of spiral inductors in RFICs

2003 ◽  
Author(s):  
D. Melendy ◽  
P. Francis ◽  
C. Pichler ◽  
Kyuwoon Hwang ◽  
G. Srinivasan ◽  
...  
Keyword(s):  
Wide Band ◽  
Compact Modeling ◽  
Spiral Inductors
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