A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

Te-Kuang Chiang

doi:10.1109/ted.2012.2212904

A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2212904 ◽

2012 ◽

Vol 59 (11) ◽

pp. 3127-3129 ◽

Cited By ~ 62

Author(s):

Te-Kuang Chiang

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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The short-channel threshold voltage model for junctionless surrounding-gate MOSFETs

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2012.6466738 ◽

2012 ◽

Cited By ~ 1

Author(s):

T. K. Chiang ◽

D. H. Chang

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Cited By ~ 5

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.054301 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054301 ◽

Cited By ~ 14

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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Threshold voltage model of junctionless cylindrical surrounding gate MOSFETs including fringing field effects

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.09.001 ◽

2015 ◽

Vol 88 ◽

pp. 188-197 ◽

Cited By ~ 13

Author(s):

Santosh Kumar Gupta

Keyword(s):

Threshold Voltage ◽

Field Effects ◽

Surrounding Gate ◽

Fringing Field ◽

Threshold Voltage Model

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Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2066278 ◽

2010 ◽

Vol 57 (11) ◽

pp. 3176-3180 ◽

Cited By ~ 29

Author(s):

Yun Seop Yu ◽

Namki Cho ◽

Sung Woo Hwang ◽

Doyeol Ahn

Keyword(s):

Threshold Voltage ◽

Conducting Path ◽

Surrounding Gate ◽

Threshold Voltage Model

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A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain

Microelectronics Reliability ◽

10.1016/j.microrel.2007.01.086 ◽

2008 ◽

Vol 48 (1) ◽

pp. 17-22 ◽

Cited By ~ 8

Author(s):

Srimanta Baishya ◽

Abhijit Mallik ◽

Chandan Kumar Sarkar

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Threshold Voltage Model

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Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.927394 ◽

2008 ◽

Vol 55 (9) ◽

pp. 2512-2516 ◽

Cited By ~ 66

Author(s):

A. Tsormpatzoglou ◽

C.A. Dimitriadis ◽

R. Clerc ◽

G. Pananakakis ◽

G. Ghibaudo

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Short Channel ◽

Threshold Voltage Model

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A Threshold Voltage Model for the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2011.1151 ◽

2011 ◽

Vol 6 (2) ◽

pp. 207-213

Author(s):

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Short Channel ◽

Threshold Voltage Model

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A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects

Solid-State Electronics ◽

10.1016/j.sse.2014.03.004 ◽

2014 ◽

Vol 95 ◽

pp. 52-60 ◽

Cited By ~ 18

Author(s):

Ajit Kumar ◽

Pramod Kumar Tiwari

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Short Channel ◽

Fully Depleted ◽

Threshold Voltage Model

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A simple 2D analytical threshold voltage model for fully depleted short-channel silicon-on-insulator MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/12/012 ◽

2004 ◽

Vol 19 (12) ◽

pp. 1397-1405 ◽

Cited By ~ 5

Author(s):

Kow-Ming Chang ◽

Han-Pang Wang

Keyword(s):

Threshold Voltage ◽

Silicon On Insulator ◽

Short Channel ◽

Fully Depleted ◽

Threshold Voltage Model

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