Large-Area Diode Laser Defect Annealing of Polycrystalline Silicon Solar Cells

2012 ◽  
Vol 59 (10) ◽  
pp. 2838-2841 ◽  
Author(s):  
Bonne Eggleston ◽  
Sergey Varlamov ◽  
Martin Green
2012 ◽  
Vol 21 (6) ◽  
pp. 1377-1383 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Ute Schubert ◽  
Bonne D. Eggleston ◽  
Daniel Ong ◽  
...  

2012 ◽  
Vol 1426 ◽  
pp. 63-68 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Bonne D. Eggleston ◽  
Sergey Varlamov ◽  
Martin A. Green

ABSTRACTIntermediate layers between silicon and borosilicate glass are investigated for compatibility with a diode laser crystallization technique for fabrication of thin-film polycrystalline silicon solar cells. SiCx, SiNx and SiOx layers or multilayer stacks of these materials have allowed silicon films of 10μm thickness to be successfully crystallized by diode laser irradiation without dewetting, with each option offering different advantages. SiCx allows the most robust crystallization process, while SiOx is the best barrier to contamination and the most stable layer. SiNx offers the best anti-reflection coating for superstrate configured solar cells. Presently, best device performance is achieved with a SiOxintermediate layer with cells achieving up to ∼540 mV open-circuit voltage.


1989 ◽  
Vol 28 (Part 1, No. 2) ◽  
pp. 167-173 ◽  
Author(s):  
Kunihiro Matsukuma ◽  
Sigeru Kokunai ◽  
Yasuaki Uchida ◽  
Satoru Suzuki ◽  
Yukoh Saegusa ◽  
...  

2006 ◽  
Vol 90 (20) ◽  
pp. 3557-3567 ◽  
Author(s):  
U. Gangopadhyay ◽  
K.H. Kim ◽  
S.K. Dhungel ◽  
U. Manna ◽  
P.K. Basu ◽  
...  

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn

Sign in / Sign up

Export Citation Format

Share Document