Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films

2011 ◽  
Vol 58 (9) ◽  
pp. 3018-3024 ◽  
Author(s):  
Mutsumi Kimura ◽  
Mamoru Furuta ◽  
Yudai Kamada ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Zno Films ◽  
Zno Thin Film

Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors

2016 ◽  
Vol 16 (10) ◽  
pp. 1369-1373 ◽  
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Chao Li ◽  
Hyung-Seok Kim ◽  
Mark Goorsky ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Deep Level ◽  
Zno Thin Film ◽  
Deep Level Defect ◽  
Defect Distribution

Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

2019 ◽  
Vol 805 ◽  
pp. 211-217 ◽  
Author(s):  
Changyong Oh ◽  
Hyunjae Jang ◽  
Hyeong Wook Kim ◽  
Hyunjae Jung ◽  
Hyungryul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors

Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors

2014 ◽  
Vol 93 ◽  
pp. 260-263
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescas ◽  
M.N. Hedhili
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Device Performance ◽  
P Type ◽  
Bottom Gate

Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

2016 ◽  
Vol 122 (10) ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Wen-Qing Zhu ◽  
Jian-Hua Zhang ◽  
Xue-Yin Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Effect Of Oxygen ◽  
Amorphous Ingazno

scholarly journals Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1761 ◽  
Author(s):  
Liaojun Wan ◽  
Fuchao He ◽  
Yu Qin ◽  
Zhenhua Lin ◽  
Jie Su ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Electrical Performance ◽  
Zno Films ◽  
Zno Thin Film ◽  
Chlorobenzoic Acid ◽  
Interfacial Modification ◽  
Temperature Solution

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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