The Multiscale Paradigm in Electronic Device Simulation

2011 ◽  
Vol 58 (5) ◽  
pp. 1425-1432 ◽  
Author(s):  
Matthias Auf der Maur ◽  
Gabriele Penazzi ◽  
Giuseppe Romano ◽  
Fabio Sacconi ◽  
Alessandro Pecchia ◽  
...  
Keyword(s):  
Electronic Device ◽  
Device Simulation

scholarly journals Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 91-95 ◽  
Author(s):  
A. Asenov ◽  
A. R. Brown ◽  
S. Roy ◽  
J. R. Barker
Keyword(s):  
Simulated Annealing Algorithm ◽  
Semiconductor Device ◽  
Electronic Device ◽  
Device Simulation ◽  
Power Electronic ◽  
Two Dimensional ◽  
Solution Strategy ◽  
Rectangular Grids ◽  
Annealing Algorithm ◽  
2D And 3D

Topologically rectangular grids offer simplicity and efficiency in the design of parallel semiconductor device simulators tailored for mesh connected MIMD platforms. This paper presents several approaches to the generation of topologically rectangular 2D and 3D grids. The effects of the partitioning of such grids on different processor configurations are studied. A simulated annealing algorithm is used to optimise the partitioning of 2D and 3D grids on two dimensional arrays of processors. Problems related to the discretization, parallel matrix generation and solution strategy are discussed. The use of topologically rectangular grids is illustrated through the example of power electronic device simulation.

Heterostructure HEMT Electronic Device Simulation with Density Functional Theory

2019 ◽  
Vol 27 (1) ◽  
pp. 79-84
Author(s):  
Yiqing Hu ◽  
Jinyan Wang ◽  
C.P. Wen ◽  
Min Yu ◽  
Lingfen Mao ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Density Functional ◽  
Electronic Device ◽  
Device Simulation ◽  
Functional Theory

Coupling atomistic and continuous media models for electronic device simulation

2013 ◽  
Vol 12 (4) ◽  
pp. 553-562 ◽  
Author(s):  
Matthias Auf der Maur ◽  
Alessandro Pecchia ◽  
Gabriele Penazzi ◽  
Fabio Sacconi ◽  
Aldo Di Carlo
Keyword(s):  
Electronic Device ◽  
Device Simulation ◽  
Continuous Media

scholarly journals A Multiparticle Drift-Diffusion Model and its Application to Organic and Inorganic Electronic Device Simulation

2019 ◽  
Vol 66 (6) ◽  
pp. 2715-2722 ◽  
Author(s):  
Daniele Rossi ◽  
Francesco Santoni ◽  
Matthias Auf Der Maur ◽  
Aldo Di Carlo
Keyword(s):  
Diffusion Model ◽  
Electronic Device ◽  
Device Simulation ◽  
Drift Diffusion Model ◽  
Drift Diffusion

Electronic Cone Illumination with the Conventional Transmission Electron Microscope

1977 ◽  
Vol 35 ◽  
pp. 72-73
Author(s):  
William Krakow
Keyword(s):  
Electronic Device ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Hollow Cone ◽  
Transmission Electron ◽  
Lissajous Figures ◽  
High Resolution Images ◽  
Imaging Mode ◽  
Diffraction Patterns ◽  
Transmission Microscope

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.

Resistance Monitor and Control for Vacuum Evaporation of Metals and Carbon

1976 ◽  
Vol 34 ◽  
pp. 572-573
Author(s):  
Russell L. Steere ◽  
Eric F. Erbe ◽  
J. Michael Moseley
Keyword(s):  
Electronic Device ◽  
Point Sources ◽  
High Contrast ◽  
Variable Resistor ◽  
Quality Of Results ◽  
Low Contrast ◽  
Evaporation Source ◽  
And Control ◽  
At Will

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.

Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

1988 ◽  
Vol 46 ◽  
pp. 848-849
Author(s):  
J. Hefter
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Electronic Device ◽  
Processing System ◽  
Average Diameter ◽  
Eutectic Solidification ◽  
Metal Silicide ◽  
The Matrix ◽  
Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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