Influence of Elastic and Inelastic Electron–Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs

2011 ◽  
Vol 58 (4) ◽  
pp. 1029-1037 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Aryan Afzalian ◽  
Abhinav Kranti ◽  
Isabelle Ferain ◽  
Chi-Woo Lee ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Silicon Nanowire ◽  
Inelastic Electron ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Nanowire Mosfets

Coupled Non-Equilibrium Green’s Function (NEGF) Electron-Phonon Interaction in Thermoelectric Materials

2011 ◽  
Author(s):  
T. D. Musho ◽  
D. G. Walker
Keyword(s):  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Phonon Scattering ◽  
Computational Method ◽  
Direct Result ◽  
Inelastic Electron ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Electron Phonon Scattering ◽  
Non Equilibrium

Over the last decade, nano-structured materials have shown a promising avenue for enhancement of the thermoelectric figure of merit. These performance enhancements in most cases have been a direct result of selectively modifying certain geometric attributes that alter the thermal or electrical transport in a desirable fashion. More often, models used to study the electrical and/or thermal transport are calculated independent of each other. However, studies have suggested electrical and thermal transport are intimately linked at the nanoscale. This provides an argument for a more rigorous treatment of the physics in an effort to capture the response of both electrons and phonons simultaneously. A simulation method has been formulated to capture the electron-phonon interaction of nanoscale electronics through a coupled non-equilibrium Greens function (NEGF) method. This approach is unique because the NEGF electron solution and NEGF phonon solution have only been solved independently and have never been coupled to capture a self-consistent inelastic electron-phonon scattering. One key aspect of this formalism is that the electron and phonon description is derived from a quantum point of view and no correction terms are necessary to account for the probabilistic nature of the transport. Additionally, because the complete phonon description is solved, scattering rates of individual phonon frequencies can be investigated to determine how electron-phonon scattering of particular frequencies influences the transport. This computational method is applied to the study of Si/Ge nanostructured superlattice thermoelectric materials.

Quantum transport through quantum dot with electron-phonon interaction

2020 ◽  
Vol 39d (2) ◽  
pp. 176-180
Author(s):  
Manish Kumar Bhatt ◽  
Sanjiv Kumar ◽  
Sunil Kumar Mishra
Keyword(s):  
Quantum Dot ◽  
Quantum Transport ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Incoherent Transport in Nanowire - The Effect of Electron-phonon Interaction

2009 ◽  
Vol 1206 ◽  
Author(s):  
Hideyuki Nishizawa ◽  
Satoshi Itoh
Keyword(s):  
Energy Dissipation ◽  
Rate Equation ◽  
Electronic Transition ◽  
Silicon Nanowire ◽  
Thermal Dissipation ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Incoherent Transport

AbstractThe incoherent transport model based on electron-phonon interaction was introduced for calculating the current-voltage characteristics of the nanowire conductor. The current-voltage characteristics of silicon nanowire calculated based on this model was discussed. The charge transport was described by the rate equation containing the coherent (tunneling) and incoherent (energy dissipation) rates, and the incoherent rate was calculated from the Hamiltonian in which the electron-phonon interaction was incorporated. The coherent transition corresponds to the electronic transition between electrode states and channel states without any energy dissipation. On the other hand, the incoherent transition corresponds to the electronic transition between electrode states and channel states where the energy difference of those two states means a thermal dissipation. Therefore, in order to carry out the calculation by the rate equation, the density of states (DOSs) of the carriers in electrode and the channel and the DOS of the phonon in the channel are needed. The current-voltage characteristics were calculated by using the DOS of n-type semiconductor for the electrode and by using intrinsic semiconductor DOS for the channel. In addition, the calculation was performed by using the DOS of the silicon nanowire phonon.

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