Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

2008 ◽  
Vol 55 (3) ◽  
pp. 727-736 ◽  
Author(s):  
Seonghoon Jin ◽  
Ting-Wei Tang ◽  
Massimo V. Fischetti
Keyword(s):  
Relaxation Time ◽  
Transport Equation ◽  
Silicon Nanowire ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Time Approximation ◽  
Nanowire Transistors ◽  
Relaxation Time Approximation

On Efficient Particle Methods for Solving the Boltzmann Transport Equation in the Relaxation-Time Approximation

2009 ◽  
Author(s):  
Nicolas G. Hadjiconstantinou ◽  
Gregg A. Radtke ◽  
Lowell L. Baker
Keyword(s):  
Relaxation Time ◽  
Transport Equation ◽  
Variance Reduction ◽  
Boltzmann Transport Equation ◽  
Computational Cost ◽  
Particle Methods ◽  
Boltzmann Transport ◽  
Time Approximation ◽  
Relaxation Time Approximation ◽  
Stochastic Particle

We present and discuss a variance-reduced stochastic particle simulation method for solving the relaxation-time model of the Boltzmann transport equation. The variance reduction, achieved by simulating only the deviation from equilibrium, results in a significant computational efficiency advantage compared to traditional stochastic particle methods in the limit of small deviation from equilibrium. More specifically, the proposed method can efficiently simulate arbitrarily small deviations from equilibrium at a computational cost that is independent of the deviation from equilibrium, which is in sharp contrast to traditional particle methods. The proposed method is developed and validated in the context of dilute gases; despite this, it is expected to directly extend to all fields (carriers) for which the relaxation-time approximation is applicable.

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