scholarly journals Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

2007 ◽  
Vol 54 (9) ◽  
pp. 2339-2351 ◽  
Author(s):  
S.O. Koswatta ◽  
S. Hasan ◽  
M.S. Lundstrom ◽  
M.P. Anantram ◽  
D.E. Nikonov
Keyword(s):  
Carbon Nanotube ◽  
Green’S Function ◽  
Green's Function ◽  
Phonon Scattering ◽  
Carbon Nanotube Transistors ◽  
Nonequilibrium Green's Function ◽  
Nonequilibrium Green’S Function ◽  
Nanotube Transistors

NONEQUILIBRIUM GREEN'S FUNCTION BASED QUANTUM TRANSPORT SIMULATION FOR STRAINED-ENGINEERED NANOSCALE TRANSISTORS IN THE PRESENCE OF ELECTRON–PHONON INTERACTIONS

2010 ◽  
Vol 09 (04) ◽  
pp. 327-333
Author(s):  
T. K. MAITI ◽  
C. K. MAITI
Keyword(s):  
Ab Initio ◽  
Green’S Function ◽  
Quantum Transport ◽  
Green's Function ◽  
Electronic Transport ◽  
Phonon Scattering ◽  
Local Density ◽  
Nonequilibrium Green's Function ◽  
Nonequilibrium Green’S Function ◽  
Nanoscale Transistors

Based on ab initio formulation and using nonequilibrium Green's function (NEGF) formalism, electronic transport in the presence of electron–phonon interactions in strained-engineered nanoscale transistors is presented. Ab initio methods are applied to treat the metal/semiconductor interface properly. NEGF formalism is applied as quantum transport and phonon scattering are the dominant factors in devices under realistic operating voltages. Local self-energy functions for electron–phonon scattering have been obtained using deformation potential theory. This approach is applied to the study of electronic transport in strain-engineered nanowire transistors. Electron–phonon interactions on broadening of local density of states are also reported.

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