scholarly journals Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

2007 ◽  
Vol 54 (9) ◽  
pp. 2143-2154 ◽  
Author(s):  
A.E. Islam ◽  
H. Kufluoglu ◽  
D. Varghese ◽  
S. Mahapatra ◽  
M.A. Alam
Keyword(s):  
Field Dependence ◽  
Interface Trap ◽  
Negative Bias ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
Hole Trapping ◽  
Trapping Effects

Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

2016 ◽  
Vol 108 (1) ◽  
pp. 012106 ◽  
Author(s):  
Cheng-Tyng Yen ◽  
Chien-Chung Hung ◽  
Hsiang-Ting Hung ◽  
Chwan-Ying Lee ◽  
Lurng-Shehng Lee ◽  
...  
Keyword(s):  
Interface Trap ◽  
Negative Bias ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
Hole Trapping

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET

2017 ◽  
Vol 897 ◽  
pp. 533-536
Author(s):  
Cheng Tyng Yen ◽  
Hsiang Ting Hung ◽  
Chien Chung Hung ◽  
Lurng Shehng Lee ◽  
Chwan Ying Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gate Oxide ◽  
Subthreshold Swing ◽  
Negative Bias ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
Hole Trapping ◽  
Charged Interface ◽  
Positively Charged

The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% when the starting bias was-15V. The increase of subthreshold swing was caused by enhanced hole trapping which could be explained by the mechanism of positively charged interface states assisted hole trapping. The increase of subthreshold swing for MOSFET with improved gate oxide was reduced to about 40% when the starting bias was-20V and the value approached saturation for starting biases more negative than-10V, which can also be explained by the proposed mechanism. The increase of subthreshold swing for MOSFET with improved oxide was not sensitive to the temperature. The increase of subthreshold swing at 175°C was only 5%~7% higher than that at room temperature.

Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1876-1882 ◽  
Author(s):  
T. Grasser ◽  
B. Kaczer ◽  
W. Goes ◽  
Th. Aichinger ◽  
Ph. Hehenberger ◽  
...  
Keyword(s):  
Negative Bias ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
Hole Trapping
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