Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

2007 ◽  
Vol 54 (6) ◽  
pp. 1402-1408 ◽  
Author(s):  
H.A. El Hamid ◽  
J.R. Guitart ◽  
B. Iniguez
Keyword(s):  
Threshold Voltage ◽  
Subthreshold Swing ◽  
Double Gate ◽  
Two Dimensional

scholarly journals Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO-=SUB=-2-=/SUB=-/La-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/HfO-=SUB=-2-=/SUB=- (HLH) Sandwich Gate Dielectrics

2020 ◽  
Vol 54 (10) ◽  
pp. 1098
Author(s):  
L. Ramesh ◽  
S. Moparthi ◽  
P.K. Tiwari ◽  
V.R. Samoju ◽  
G.K. Saramekala
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Hafnium Dioxide ◽  
Subthreshold Swing ◽  
Oxide Material ◽  
Double Gate ◽  
Pixel Intensity

In this paper, the electrical properties of a double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) is investigated. To increase the ON-current and pixel intensity, and control the voltage stress bias, the conventional gate oxide material (silicon dioxide SiO2) is replaced with a tri-high-k gate dielectric layer, hafnium dioxide HfO2/lanthanum oxide La2O3/hafnium dioxide HfO2 (HLH). Further, the performance of the proposed DG-DAL structure is compared with the single-active-layer (SAL) and dual-active-layer (DAL) TFTs. The amorphous indium-gallium zinc-oxide (a-IGZO) is considered as active layer for SAL channel region, and on the other hand, a-IGZO and indium-tin-oxide (ITO) are considered as active layers for DAL TFT and DG-DAL TFT channel regions. The parameters such as OFF-current, ON-current, ION/IOFF ratio, threshold voltage, mobility, average subthreshold swing, etc. are evaluated for the considered structures. It is observed that the DG-DAL TFT with HLH dielectric offers high ON-current of 3.85·10-3 A/μm, very low OFF-current of 2.53·10-17 A/μm, very high ION/IOFF ratio of 1.51·1014, the threshold voltage of 0.642 V, high mobility of 35 cm2·v-1·s-1 and average subthreshold swing of 127.84 mV/dec. A commercial TCAD simulation tool ATLAS from SilvacoTM is used to investigate all the parameters for considered structures. Keywords: single active layer (SAL), dual active layer (DAL), double-gate dual active layer (DG-DAL), InGaZnO (IGZO), InSnO (ITO), thin-film transistor (TFT), HfO2/La2O3/HfO2 (HLH).

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