Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

2007 ◽  
Vol 54 (3) ◽  
pp. 439-445 ◽  
Author(s):  
Arash Hazeghi ◽  
Tejas Krishnamohan ◽  
H.-S. Philip Wong
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Investigation of Parameters for Schottky Barrier (SB) Height for Schottky Barrier Based Carbon Nanotube Field Effect Transistor Device

2020 ◽  
Vol 15 (7) ◽  
pp. 783-791
Author(s):  
Anil Kumar Bhardwaj ◽  
Sumeet Gupta ◽  
Balwinder Raj
Keyword(s):  
Dielectric Constant ◽  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Oxide Thickness ◽  
Proper Choice ◽  
Effect Transistor

The design and development of Schottky Barrier Carbon Nanotube Field Effect Transistor (SB CNTFET) is still in the primitive research phase for its utilization in digital design. There is an immediate requirement for the analysis of parametric relations with structural factors to benefit the researchers working in this field. This work helps in the improvement of SB based CNTFET devices to be used in the development of various circuit applications. In this work, investigation of Schottky Barrier height on the performance of SB CNTFET for various geometrical and physical design parameters at the device level has been reported. The analysis of various device parameters of carbon nanotube, i. e., chirality, diameter, band gap, oxide thickness and dielectric constant has been carried out viz. subthreshold conduction, and ION/IOFF ratio. The paper also reports the effect of high dielectric constant material in SB CNTFET with oxide thickness along with Schottky Barrier Height Variation. The performance of SB CNTFET with variation in Schottky Barrier height and temperature variation is also reported. The results obtained indicate that performance of SB based CNTFET can be modified by the proper choice of chirality, dielectrics, oxide thickness and operating temperature. The SB parameter can be optimized by proper choice of metal contact in case of CNTFET.

Imaging Schottky Barriers at Carbon Nanotube Contacts

2001 ◽  
Vol 706 ◽  
Author(s):  
Marcus Freitag ◽  
A. T. Johnson
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Schottky Barriers ◽  
Scanning Gate Microscopy ◽  
Gating Mechanism ◽  
Effect Transistor ◽  
Semiconducting Nanotubes

AbstractWe use scanning gate microscopy to precisely locate the gating response in single-wall nanotube devices. Junctions of metallic and semiconducting nanotubes show a dramatic increase in transport current when they are electrostatically doped with holes at the junction. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier. A similar effect is seen in field-effect transistors made from an individual semiconducting single-wall carbon nanotube. In this case, there are two Schottky barriers at the metal contacts, one of which is forward, and one of which is reverse biased. The gating action is only observed at the reverse biased Schottky barrier at the positive electrode. By positioning the gate near one of the contacts, we convert the nanotube field-effect transistor into a rectifying nanotube diode. These experiments both clarify the gating mechanism for nanotube devices and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities at a nanotube field-effect transistor.

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