Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

2006 ◽  
Vol 53 (9) ◽  
pp. 2207-2215 ◽  
Author(s):  
Y. Cai ◽  
Y. Zhou ◽  
K.M. Lau ◽  
K.J. Chen
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Enhancement Mode ◽  
Gan Hemts

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

2009 ◽  
Vol 30 (12) ◽  
pp. 124002 ◽  
Author(s):  
Quan Si ◽  
Hao Yue ◽  
Ma Xiaohua ◽  
Xie Yuanbin ◽  
Ma Jigang
Keyword(s):  
Plasma Treatment ◽  
Enhancement Mode ◽  
Gan Hemts

Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

2007 ◽  
Author(s):  
Congwen Yi ◽  
Ruonan Wang ◽  
Wei Huang ◽  
Wilson C.-W. Tang ◽  
K. M. Lau ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Enhancement Mode ◽  
Gan Hemts
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