An analysis of small-signal gate-drain resistance effect on RF power MOSFETs

2003 ◽  
Vol 50 (2) ◽  
pp. 525-528 ◽  
Author(s):  
Yo-Sheng Lin ◽  
Shey-Shi Lu
Keyword(s):  
Small Signal ◽  
Rf Power ◽  
Power Mosfets

Silicon RF Power MOSFETs

10.1142/5725 ◽  
2005 ◽  
Author(s):  
B Jayant Baliga
Keyword(s):  
Rf Power ◽  
Power Mosfets

High Power-Density 4H-SiC RF MOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1277-1280 ◽  
Author(s):  
G. Gudjónsson ◽  
Fredrik Allerstam ◽  
H.Ö. Ólafsson ◽  
Per Åke Nilsson ◽  
Hans Hjelmgren ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Cutoff Frequency ◽  
Double Gate ◽  
High Power Density ◽  
Rf Power ◽  
Drain Voltage ◽  
Power Mosfets ◽  
First Time ◽  
Power Densities

We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

Analytic Large-Signal Modeling of Silicon RF Power MOSFETs

2007 ◽  
Vol 55 (5) ◽  
pp. 829-837 ◽  
Author(s):  
Paolo Fioravanti ◽  
Oana Spulber ◽  
Maria Merlyne De Souza
Keyword(s):  
Rf Power ◽  
Signal Modeling ◽  
Large Signal ◽  
Power Mosfets

Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs

2009 ◽  
Vol 57 (12) ◽  
pp. 3389-3394 ◽  
Author(s):  
Chia-Yu Chen ◽  
O. Tornblad ◽  
R.W. Dutton
Keyword(s):  
Rf Power ◽  
Power Mosfets ◽  
Lateral Channel

Performance modeling of RF power MOSFETs

1999 ◽  
Vol 46 (8) ◽  
pp. 1794-1802 ◽  
Author(s):  
M. Trivedi ◽  
P. Khandelwal ◽  
K. Shenai
Keyword(s):  
Performance Modeling ◽  
Rf Power ◽  
Power Mosfets
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