Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor

2002 ◽  
Vol 49 (11) ◽  
pp. 1969-1978 ◽  
Author(s):  
Yang-Yu Fan ◽  
R.E. Nieh ◽  
J.C. Lee ◽  
G. Lucovsky ◽  
G.A. Brown ◽  
...  
Keyword(s):  
Current Model ◽  
Temperature Dependent ◽  
Model Application ◽  
Mos Capacitor ◽  
Gate Capacitance

A Temperature-dependent Current Model for Phemt on Gaas

2008 ◽  
Vol 22 (1) ◽  
pp. 39-46 ◽  
Author(s):  
L. Wang ◽  
R. M. Xu ◽  
Y. C. Guo ◽  
B. Yan
Keyword(s):  
Current Model ◽  
Temperature Dependent

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 285-288 ◽  
Author(s):  
Patrick Fiorenza ◽  
Ferdinando Iucolano ◽  
Mario Saggio ◽  
Fabrizio Roccaforte
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interface Traps ◽  
Temperature Dependent ◽  
Discharge Time ◽  
Capacitance Measurements ◽  
Gate Capacitance ◽  
Transient Capacitance ◽  
Oxide Traps

In this paper, near interface traps (NITs) in lateral 4H-SiC MOSFETs were investigated employing temperature dependent transient gate capacitance measurements (C-t). TheC-tmeasurements as a function of temperature indicated that the effective NITs discharge time is temperature independent and electrons from NITs are emitted toward the semiconductor via-tunnelling and/or trap-to-trap tunnelling. The NITs discharge time was modelled taking into account also the interface state density in a distributed circuit and it allowed to locate traps within a distance of about 1.3nm from the SiO2/4H-SiC interface.

THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO2 INTERFACIAL LAYER

2019 ◽  
Vol 26 (08) ◽  
pp. 1950045 ◽  
Author(s):  
ABDULKERIM KARABULUT ◽  
IKRAM ORAK ◽  
MUJDAT CAGLAR ◽  
ABDULMECIT TURUT
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Temperature Dependent ◽  
Mos Capacitor ◽  
Gaas Wafer ◽  
Layer Deposition ◽  
Current Voltage ◽  
High Dielectric

The Au/Ti/HfO2/[Formula: see text]-GaAs metal/insulating layer/semiconductor structures have been fabricated using standard thermal atomic layer deposition. We experimentally showed whether or not the HfO2 interfacial layer grown on the [Formula: see text]-GaAs wafer modifies the barrier height (BH) of the device at the room temperature. Besides, we investigated the measurement based on temperature dependence of the device parameters from the current–voltage ([Formula: see text]–[Formula: see text]) characteristics of the diode in 60–400[Formula: see text]K range with steps of 10[Formula: see text]K. The X-ray photoelectron spectroscopy (XPS) have been carried out to characterize the surfaces of both [Formula: see text]-GaAs wafer and HfO2 thin films. The series resistance value from the temperature-dependent [Formula: see text]–[Formula: see text] characteristics decreased with decreasing temperature, which is a desired positive result for the devices developed from the MOS capacitor. The BH value of 0.94[Formula: see text]eV (300[Formula: see text]K) has been obtained for the device with the HfO2 layer which is a higher value than the value of 0.77[Formula: see text]eV (300[Formula: see text]K) of the device without HfO2 layer. Therefore, we can say that the HfO2 thin layer at the metal/GaAs interface can also be used for the BH modification as a gate insulator for GaAs MOS capacitor and MOSFETs. When the temperature-dependent [Formula: see text]–[Formula: see text] characteristics at low temperatures have been considered, it has been observed that the current prefers to flow through the lowest BHs due to the BH inhomogeneities.

Energy Considerations in the Spreading of LNG on Sea Water

2008 ◽  
Author(s):  
A. Subramani ◽  
S. Jayanti
Keyword(s):  
Heat Transfer ◽  
Sea Water ◽  
Current Model ◽  
Theoretical Models ◽  
Effect Of Temperature ◽  
Test Case ◽  
Hazardous Substance ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Conventional Models

The spreading of an accidental spill of Liquefied Natural Gas (LNG) on sea water has been studied for many years and several theoretical models have been proposed and successfully used. Many modeling techniques have been used by researchers for the spreading of LNG. However, most of these neglect the heat transfer aspects related to the spreading, and the effect of temperature dependent properties such as density, thermal conductivity and specific heat of LNG is not included in the analysis. In the present study, this situation is redressed by including the depth-averaged energy equation in a one-dimensional model of the spreading of LNG on sea water. The thermophysical and transport properties of the fluid are made temperature-dependent and heat transfer to the pool from the water below and the flame above are included. The resulting set of coupled one-dimensional mass, radial momentum and energy balance equations are solved numerically using an explicit, second order-accurate finite difference method-based discretization of the governing equations. Results obtained in the present study show that the incorporation of the variable properties gives significantly improved predictions over conventional models. The predicted results are compared with the experimental results of Raj et al [1], and with a conventional, constant-properties model of Fay [2] for the test case #12. Excellent agreement is found between the current model predictions and the experimental data while the conventional model overpredicts the pool diameter for longer times. It is demonstrated that the present approach is inherently capable of distinguishing between the spreading of different LNG mixtures, and can therefore be readily extended to the analysis of the accidental spill of any other hazardous substance.

scholarly journals Characterization of Bacillus anthracis Germinant Receptors In Vitro

2005 ◽  
Vol 187 (23) ◽  
pp. 8055-8062 ◽  
Author(s):  
Nathan Fisher ◽  
Philip Hanna
Keyword(s):  
Bacillus Anthracis ◽  
Current Model ◽  
Insertion Mutagenesis ◽  
Cell Type ◽  
Dormant Cell ◽  
Temperature Dependent ◽  
Infectious Cycle ◽  
A Current

ABSTRACT Bacillus anthracis begins its infectious cycle as a metabolically dormant cell type, the endospore. Upon entry into a host, endospores rapidly differentiate into vegetative bacilli through the process of germination, thus initiating anthrax. Elucidation of the signals that trigger germination and the receptors that recognize them is critical to understanding the pathogenesis of B. anthracis. Individual mutants deficient in each of the seven putative germinant receptor-encoding loci were constructed via temperature-dependent, plasmid insertion mutagenesis and used to correlate these receptors with known germinant molecules. These analyses showed that the GerK and GerL receptors are jointly required for the alanine germination pathway and also are individually required for recognition of either proline and methionine (GerK) or serine and valine (GerL) as cogerminants in combination with inosine. The germinant specificity of GerS was refined from a previous study in a nonisogenic background since it was required only for germination in response to aromatic amino acid cogerminants. The gerA and gerY loci were found to be dispensable for recognition of all known germinant molecules. In addition, we show that the promoter of each putative germinant receptor operon, except that of the gerA locus, is active during sporulation. A current model of B. anthracis endospore germination is presented.

scholarly journals Error of the linear current model application to magnetic field of current in square conductor calculation

2020 ◽  
Vol 25 (3) ◽  
Author(s):  
Yu.K. Ivashina ◽  
◽  
T.L. Goncharenko ◽  
Ya.D. Plotkin ◽  
◽  
...  
Keyword(s):  
Magnetic Field ◽  
Current Model ◽  
Model Application ◽  
Linear Current
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