Study of Electrical Stress Effect on SiGe HBT Low-Noise Amplifier Performance by Simulation

2006 ◽  
Vol 6 (4) ◽  
pp. 550-555 ◽  
Author(s):  
Chuanzhao Yu ◽  
J. S. Yuan ◽  
John Shen ◽  
Enjun Xiao
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Stress Effect ◽  
Sige Hbt ◽  
Electrical Stress ◽  
Noise Amplifier

scholarly journals Single Event Effect Analysis of SiGe Low Noise Amplifier

2021 ◽  
Vol 25 (2) ◽  
pp. 57-64
Author(s):  
Manel Bouhouche ◽  
◽  
Saida Latreche ◽  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Low Noise ◽  
Operating Conditions ◽  
Low Noise Amplifier ◽  
Radiation Tolerance ◽  
Single Event ◽  
Effect Analysis ◽  
Sige Hbt ◽  
High Let ◽  
Noise Amplifier

This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations were performed to evaluate the SET susceptibility of considered LNA cascode configurations, and we have analyzed how the strike parameters affect their output response. In this fact the strike position, linear energy transfer (LET), and track radius, were varied, and the resulting transients were compared for the different LNA configurations. Through this study, the potential capability of the inverse mode SiGe heterojunction bipolar transistor (HBT) in LNA radiation tolerance was confirmed for various strike operating conditions. It has been demonstrated that the single event sensitivity was reduced for LNA employing inverse mode SiGe HBT for strike device. The strike influence on the different LNA configurations response depends on strike LET, where a reduced SET variation is observed for high LET.

A dual-band SiGe HBT low noise amplifier

2010 ◽  
Author(s):  
Hong-yun Xie ◽  
Zhi-yi Lu ◽  
Wan-rong Zhang ◽  
Pei Shen ◽  
Chun-bao Ding ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Sige Hbt ◽  
Noise Amplifier

A 3 to 5 GHz UWB SiGe HBT Low Noise Amplifier for WPANS IEEE 802.15.3a Standard

2007 ◽  
Vol 6 (4) ◽  
pp. 579-583
Author(s):  
Farid Touati ◽  
Skandar Douss ◽  
Zia Nadir ◽  
Mohammed Bait Suwailam ◽  
Mourad Loulou
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Sige Hbt ◽  
Noise Amplifier ◽  
5 Ghz

A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

2013 ◽  
Vol 336-338 ◽  
pp. 1490-1495
Author(s):  
Yong Xiang ◽  
Yan Bin Luo ◽  
Ren Jie Zhou ◽  
Cheng Yan Ma
Keyword(s):  
Noise Figure ◽  
Impedance Matching ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gain Compression ◽  
Sige Hbt ◽  
Current Consumption ◽  
Sige Bicmos ◽  
Noise Amplifier ◽  
Feedback Resistor

A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

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